TY - JOUR
T1 - Structure-related strain and stress in thin hydrogenated microcrystalline silicon films
AU - Christova, K.
AU - Alexandrova, S.
AU - Abramov, A.
AU - Valcheva, E.
AU - Ranguelov, B.
AU - Longeaud, C.
AU - Reynolds, S.
AU - Roca I Cabarrocas, P.
PY - 2010/1/1
Y1 - 2010/1/1
N2 - The stress/strain relation for hydrogenated microcrystalline silicon (μc-Si:H) films in the thickness range 10 to 200 nm was studied. It was found from wafer curvature measurements that all deposited films exhibit compressive intrinsic stress, which decreases with film thickness. This finding is in agreement with the stress level seen from the shifts in Raman spectra. The strain was approached through the Raman Mechanical Coefficient for the thin films and was estimated to be -1.4×10-5 (cm-1/MPa). The Raman spectra indicated highly crystalline films. The deconvolution of the spectra into Lorentzian components revealed inclusion of defective nanocrystallites and amorphous phase as well. The fractions of the different constituents were estimated. The contribution of the defective nanocrystallites to the overall stress in the films has been interpreted.
AB - The stress/strain relation for hydrogenated microcrystalline silicon (μc-Si:H) films in the thickness range 10 to 200 nm was studied. It was found from wafer curvature measurements that all deposited films exhibit compressive intrinsic stress, which decreases with film thickness. This finding is in agreement with the stress level seen from the shifts in Raman spectra. The strain was approached through the Raman Mechanical Coefficient for the thin films and was estimated to be -1.4×10-5 (cm-1/MPa). The Raman spectra indicated highly crystalline films. The deconvolution of the spectra into Lorentzian components revealed inclusion of defective nanocrystallites and amorphous phase as well. The fractions of the different constituents were estimated. The contribution of the defective nanocrystallites to the overall stress in the films has been interpreted.
U2 - 10.1088/1742-6596/253/1/012056
DO - 10.1088/1742-6596/253/1/012056
M3 - Conference article
AN - SCOPUS:79952405693
SN - 1742-6588
VL - 253
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - 1
M1 - 012056
T2 - Progress in Solid State and Molecular Electronics, Ionics and Photonics, 16 ISCMP
Y2 - 29 August 2010 through 3 September 2010
ER -