TY - JOUR
T1 - Studies by photothermal deflection spectroscopy of defect formation in a-Si:H
AU - Thèye, M. L.
AU - Chahed, L.
AU - Roca I Cabarrocas, P.
AU - Zellama, K.
PY - 1991/1/1
Y1 - 1991/1/1
N2 - The optical absorption spectra determined between 2 and 0·6 eV by a combination of optical transmission and photothermal deflection spectroscopy measurements for two a-Si:H samples deposited at 100 and 250°C have been carefully compared in the as-deposited, annealed and light-soaked states. The results as a whole are interpreted in a quantitative way by the recently proposed weak-bond-to-dangling-bond conversion model.
AB - The optical absorption spectra determined between 2 and 0·6 eV by a combination of optical transmission and photothermal deflection spectroscopy measurements for two a-Si:H samples deposited at 100 and 250°C have been carefully compared in the as-deposited, annealed and light-soaked states. The results as a whole are interpreted in a quantitative way by the recently proposed weak-bond-to-dangling-bond conversion model.
U2 - 10.1080/01418639108224435
DO - 10.1080/01418639108224435
M3 - Article
AN - SCOPUS:0026000074
SN - 1364-2812
VL - 63
SP - 143
EP - 150
JO - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
IS - 1
ER -