Studies by photothermal deflection spectroscopy of defect formation in a-Si:H

M. L. Thèye; L. Chahed; P. Roca I Cabarrocas; K. Zellama

doi:10.1080/01418639108224435

Studies by photothermal deflection spectroscopy of defect formation in a-Si:H

M. L. Thèye
, L. Chahed
, P. Roca I Cabarrocas
, K. Zellama

Centre national de la recherche scientifique

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The optical absorption spectra determined between 2 and 0·6 eV by a combination of optical transmission and photothermal deflection spectroscopy measurements for two a-Si:H samples deposited at 100 and 250°C have been carefully compared in the as-deposited, annealed and light-soaked states. The results as a whole are interpreted in a quantitative way by the recently proposed weak-bond-to-dangling-bond conversion model.

Original language	English
Pages (from-to)	143-150
Number of pages	8
Journal	Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume	63
Issue number	1
DOIs	https://doi.org/10.1080/01418639108224435
Publication status	Published - 1 Jan 1991

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10.1080/01418639108224435

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title = "Studies by photothermal deflection spectroscopy of defect formation in a-Si:H",

abstract = "The optical absorption spectra determined between 2 and 0·6 eV by a combination of optical transmission and photothermal deflection spectroscopy measurements for two a-Si:H samples deposited at 100 and 250°C have been carefully compared in the as-deposited, annealed and light-soaked states. The results as a whole are interpreted in a quantitative way by the recently proposed weak-bond-to-dangling-bond conversion model.",

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Studies by photothermal deflection spectroscopy of defect formation in a-Si:H. / Thèye, M. L.; Chahed, L.; Roca I Cabarrocas, P. et al.
In: Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, Vol. 63, No. 1, 01.01.1991, p. 143-150.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Studies by photothermal deflection spectroscopy of defect formation in a-Si:H

AU - Thèye, M. L.

AU - Chahed, L.

AU - Roca I Cabarrocas, P.

AU - Zellama, K.

PY - 1991/1/1

Y1 - 1991/1/1

N2 - The optical absorption spectra determined between 2 and 0·6 eV by a combination of optical transmission and photothermal deflection spectroscopy measurements for two a-Si:H samples deposited at 100 and 250°C have been carefully compared in the as-deposited, annealed and light-soaked states. The results as a whole are interpreted in a quantitative way by the recently proposed weak-bond-to-dangling-bond conversion model.

AB - The optical absorption spectra determined between 2 and 0·6 eV by a combination of optical transmission and photothermal deflection spectroscopy measurements for two a-Si:H samples deposited at 100 and 250°C have been carefully compared in the as-deposited, annealed and light-soaked states. The results as a whole are interpreted in a quantitative way by the recently proposed weak-bond-to-dangling-bond conversion model.

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DO - 10.1080/01418639108224435

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SN - 1364-2812

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EP - 150

JO - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

IS - 1

ER -

Studies by photothermal deflection spectroscopy of defect formation in a-Si:H

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