Studies of buried interfaces Cu(In,Ga)Se2/CdS XPS and electrical investigations

B. Canava; J. Vigneron; A. Etcheberry; D. Guimard; P. P. Grand; J. F. Guillemoles; D. Lincot; S. Ould Saad Hamatly; Z. Djebbour; D. Mencaraglia

doi:10.1016/S0040-6090(03)00273-6

Studies of buried interfaces Cu(In,Ga)Se₂/CdS XPS and electrical investigations

B. Canava, J. Vigneron, A. Etcheberry, D. Guimard, P. P. Grand, J. F. Guillemoles, D. Lincot, S. Ould Saad Hamatly, Z. Djebbour, D. Mencaraglia

Research output: Contribution to journal › Conference article › peer-review

Abstract

The formation of interface Cu(In,Ga)Se₂/CdS in solar cells is not yet well understood but seems to be the key to further improvements of their performance. This interface depends on many parameters such as the initial chemical state of the CIGS surface or the chemical bath deposition conditions used to grow the CdS layer. In this paper, we focus our attention on the CIGS/CdS hetero-interface at different stages of its formation using mainly XPS studies of buried interfaces which were studied after gradual sputtering. We have investigated interfaces on CIGS submitted to various surface treatments, analogue to those involved in fabrication steps (NH₃ dipping...). Kelvin probe and admittance spectroscopy measurements have been also performed on several interfaces prepared in the same conditions to correlate the chemical composition with the electrical response of the buried interfaces.

Original language	English
Pages (from-to)	289-295
Number of pages	7
Journal	Thin Solid Films
Volume	431-432
DOIs	https://doi.org/10.1016/S0040-6090(03)00273-6
Publication status	Published - 1 May 2003
Externally published	Yes
Event	Proceedings of Symposium B - Strasbourg, France Duration: 18 Jun 2002 → 21 Jun 2002

Keywords

Buried interface
CuInSe
Electrical response
Surface treatments
XPS

Access to Document

10.1016/S0040-6090(03)00273-6

Cite this

@article{a9734879ab0c40ad934c612bb9387de6,

title = "Studies of buried interfaces Cu(In,Ga)Se2/CdS XPS and electrical investigations",

abstract = "The formation of interface Cu(In,Ga)Se2/CdS in solar cells is not yet well understood but seems to be the key to further improvements of their performance. This interface depends on many parameters such as the initial chemical state of the CIGS surface or the chemical bath deposition conditions used to grow the CdS layer. In this paper, we focus our attention on the CIGS/CdS hetero-interface at different stages of its formation using mainly XPS studies of buried interfaces which were studied after gradual sputtering. We have investigated interfaces on CIGS submitted to various surface treatments, analogue to those involved in fabrication steps (NH3 dipping...). Kelvin probe and admittance spectroscopy measurements have been also performed on several interfaces prepared in the same conditions to correlate the chemical composition with the electrical response of the buried interfaces.",

keywords = "Buried interface, CuInSe, Electrical response, Surface treatments, XPS",

author = "B. Canava and J. Vigneron and A. Etcheberry and D. Guimard and Grand, \{P. P.\} and Guillemoles, \{J. F.\} and D. Lincot and \{Ould Saad Hamatly\}, S. and Z. Djebbour and D. Mencaraglia",

year = "2003",

month = may,

day = "1",

doi = "10.1016/S0040-6090(03)00273-6",

language = "English",

volume = "431-432",

pages = "289--295",

journal = "Thin Solid Films",

issn = "0040-6090",

note = "Proceedings of Symposium B ; Conference date: 18-06-2002 Through 21-06-2002",

}

TY - JOUR

T1 - Studies of buried interfaces Cu(In,Ga)Se2/CdS XPS and electrical investigations

AU - Canava, B.

AU - Vigneron, J.

AU - Etcheberry, A.

AU - Guimard, D.

AU - Grand, P. P.

AU - Guillemoles, J. F.

AU - Lincot, D.

AU - Ould Saad Hamatly, S.

AU - Djebbour, Z.

AU - Mencaraglia, D.

PY - 2003/5/1

Y1 - 2003/5/1

N2 - The formation of interface Cu(In,Ga)Se2/CdS in solar cells is not yet well understood but seems to be the key to further improvements of their performance. This interface depends on many parameters such as the initial chemical state of the CIGS surface or the chemical bath deposition conditions used to grow the CdS layer. In this paper, we focus our attention on the CIGS/CdS hetero-interface at different stages of its formation using mainly XPS studies of buried interfaces which were studied after gradual sputtering. We have investigated interfaces on CIGS submitted to various surface treatments, analogue to those involved in fabrication steps (NH3 dipping...). Kelvin probe and admittance spectroscopy measurements have been also performed on several interfaces prepared in the same conditions to correlate the chemical composition with the electrical response of the buried interfaces.

AB - The formation of interface Cu(In,Ga)Se2/CdS in solar cells is not yet well understood but seems to be the key to further improvements of their performance. This interface depends on many parameters such as the initial chemical state of the CIGS surface or the chemical bath deposition conditions used to grow the CdS layer. In this paper, we focus our attention on the CIGS/CdS hetero-interface at different stages of its formation using mainly XPS studies of buried interfaces which were studied after gradual sputtering. We have investigated interfaces on CIGS submitted to various surface treatments, analogue to those involved in fabrication steps (NH3 dipping...). Kelvin probe and admittance spectroscopy measurements have been also performed on several interfaces prepared in the same conditions to correlate the chemical composition with the electrical response of the buried interfaces.

KW - Buried interface

KW - CuInSe

KW - Electrical response

KW - Surface treatments

KW - XPS

U2 - 10.1016/S0040-6090(03)00273-6

DO - 10.1016/S0040-6090(03)00273-6

M3 - Conference article

AN - SCOPUS:0038356615

SN - 0040-6090

VL - 431-432

SP - 289

EP - 295

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of Symposium B

Y2 - 18 June 2002 through 21 June 2002