Study of 1/f and generation-recombination noise in four gate transistors

A. Luque Rodríguez; J. A. Jiménez Tejada; M. Marun González; M. Reverto Planes; P. López Varo; A. Godoy

doi:10.1109/ICNF.2011.5994322

Study of 1/f and generation-recombination noise in four gate transistors

A. Luque Rodríguez
, J. A. Jiménez Tejada
, M. Marun González
, M. Reverto Planes
, P. López Varo
, A. Godoy

Universidad de Granada, Facultad de Ciencias

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

In this work, we study different noise sources that are present in four-gate field-effect-transistors (G4-FET). We present a model for the generation-recombination (g-r) noise due to traps located in the depletion regions and in the bulk, and for the 1/f noise due to traps in the top and bottom oxides. One of the main advantages of this structure is that the position and size of the conduction channel can be controlled by the application of adequate voltages to its gates (front and back MOS gates and two lateral JFET gates). However, the channel is also prone to be affected by the noise sources distributed throughout the device. Thus, the current noise power spectral density is a combination of all these noise sources. Experimental data showing such a combination are interpreted with our model.

Original language	English
Title of host publication	Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011
Pages	283-286
Number of pages	4
DOIs	https://doi.org/10.1109/ICNF.2011.5994322
Publication status	Published - 19 Sept 2011
Externally published	Yes
Event	21st International Conference on Noise and Fluctuations, ICNF 2011 - Toronto, ON, Canada Duration: 12 Jun 2011 → 16 Jun 2011

Publication series

Name	Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011

Conference

Conference	21st International Conference on Noise and Fluctuations, ICNF 2011
Country/Territory	Canada
City	Toronto, ON
Period	12/06/11 → 16/06/11

Keywords

1/f noise
Four-gate transistor
generation-recombination noise

Access to Document

10.1109/ICNF.2011.5994322

Cite this

Luque Rodríguez, A., Jiménez Tejada, J. A., Marun González, M., Reverto Planes, M., López Varo, P., & Godoy, A. (2011). Study of 1/f and generation-recombination noise in four gate transistors. In Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011 (pp. 283-286). Article 5994322 (Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011). https://doi.org/10.1109/ICNF.2011.5994322

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title = "Study of 1/f and generation-recombination noise in four gate transistors",

abstract = "In this work, we study different noise sources that are present in four-gate field-effect-transistors (G4-FET). We present a model for the generation-recombination (g-r) noise due to traps located in the depletion regions and in the bulk, and for the 1/f noise due to traps in the top and bottom oxides. One of the main advantages of this structure is that the position and size of the conduction channel can be controlled by the application of adequate voltages to its gates (front and back MOS gates and two lateral JFET gates). However, the channel is also prone to be affected by the noise sources distributed throughout the device. Thus, the current noise power spectral density is a combination of all these noise sources. Experimental data showing such a combination are interpreted with our model.",

keywords = "1/f noise, Four-gate transistor, generation-recombination noise",

author = "\{Luque Rodr{\'i}guez\}, A. and \{Jim{\'e}nez Tejada\}, \{J. A.\} and \{Marun Gonz{\'a}lez\}, M. and \{Reverto Planes\}, M. and \{L{\'o}pez Varo\}, P. and A. Godoy",

year = "2011",

month = sep,

day = "19",

doi = "10.1109/ICNF.2011.5994322",

language = "English",

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series = "Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011",

pages = "283--286",

booktitle = "Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011",

note = "21st International Conference on Noise and Fluctuations, ICNF 2011 ; Conference date: 12-06-2011 Through 16-06-2011",

}

Luque Rodríguez, A, Jiménez Tejada, JA, Marun González, M, Reverto Planes, M, López Varo, P & Godoy, A 2011, Study of 1/f and generation-recombination noise in four gate transistors. in Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011., 5994322, Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011, pp. 283-286, 21st International Conference on Noise and Fluctuations, ICNF 2011, Toronto, ON, Canada, 12/06/11. https://doi.org/10.1109/ICNF.2011.5994322

Study of 1/f and generation-recombination noise in four gate transistors. / Luque Rodríguez, A.; Jiménez Tejada, J. A.; Marun González, M. et al.
Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011. 2011. p. 283-286 5994322 (Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Study of 1/f and generation-recombination noise in four gate transistors

AU - Luque Rodríguez, A.

AU - Jiménez Tejada, J. A.

AU - Marun González, M.

AU - Reverto Planes, M.

AU - López Varo, P.

AU - Godoy, A.

PY - 2011/9/19

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N2 - In this work, we study different noise sources that are present in four-gate field-effect-transistors (G4-FET). We present a model for the generation-recombination (g-r) noise due to traps located in the depletion regions and in the bulk, and for the 1/f noise due to traps in the top and bottom oxides. One of the main advantages of this structure is that the position and size of the conduction channel can be controlled by the application of adequate voltages to its gates (front and back MOS gates and two lateral JFET gates). However, the channel is also prone to be affected by the noise sources distributed throughout the device. Thus, the current noise power spectral density is a combination of all these noise sources. Experimental data showing such a combination are interpreted with our model.

AB - In this work, we study different noise sources that are present in four-gate field-effect-transistors (G4-FET). We present a model for the generation-recombination (g-r) noise due to traps located in the depletion regions and in the bulk, and for the 1/f noise due to traps in the top and bottom oxides. One of the main advantages of this structure is that the position and size of the conduction channel can be controlled by the application of adequate voltages to its gates (front and back MOS gates and two lateral JFET gates). However, the channel is also prone to be affected by the noise sources distributed throughout the device. Thus, the current noise power spectral density is a combination of all these noise sources. Experimental data showing such a combination are interpreted with our model.

KW - 1/f noise

KW - Four-gate transistor

KW - generation-recombination noise

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T3 - Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011

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BT - Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011

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Luque Rodríguez A, Jiménez Tejada JA, Marun González M, Reverto Planes M, López Varo P, Godoy A. Study of 1/f and generation-recombination noise in four gate transistors. In Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011. 2011. p. 283-286. 5994322. (Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011). doi: 10.1109/ICNF.2011.5994322

Study of 1/f and generation-recombination noise in four gate transistors

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