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Study of graphene growth mechanism on nickel thin films

  • Institut polytechnique de Paris
  • Université Paris-Sud 11
  • University of Antwerp
  • Department of Energy
  • Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

2 Citations (Scopus)

Abstract

Since chemical vapor deposition of carbon-containing precursors onto transition metals tends to develop as the preferred growth process for the mass production of graphene films, the deep understanding of its mechanism becomes mandatory. In the case of nickel, which represents an economically viable catalytic substrate, the solubility of carbon is significant enough so that the growth mechanism proceeds in at least two steps: the dissolution of carbon in the metal followed by the precipitation of graphene at the surface. In this work, we use ion implantation to dissolve calibrated amounts of carbon in nickel thin films and grow graphene films by annealing. Observations of those graphene films using transmission electron microscopy, directly on the growth substrate as well as transfered on TEM grids, allowed us to precisely study the mechanisms that lead to their formation.

Original languageEnglish
Title of host publicationCarbon Nanostructures
PublisherSpringer International Publishing
Pages1-7
Number of pages7
Edition9783642206436
DOIs
Publication statusPublished - 1 Jan 2012

Publication series

NameCarbon Nanostructures
Number9783642206436
Volume0
ISSN (Print)2191-3005
ISSN (Electronic)2191-3013

Keywords

  • Graphene film
  • Graphite flake
  • Nickel film
  • Silicon oxide layer
  • Transmission electron microscopy grid

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