Study of nanocrystalline silicon-germanium for the development of thin film transistors

Jean Paul Kleider; Erik Johnson; Rudolf Brüggemann; Arturo Torres; Mario Moreno; Pedro Rosales; Miguel Dominguez; Alfonso Torres; Alfredo Morales; Adrian Itzmoyotl; Javier De La Hidalga

doi:10.1051/epjap/2020190264

Study of nanocrystalline silicon-germanium for the development of thin film transistors

Jean Paul Kleider
, Erik Johnson
, Rudolf Brüggemann
, Arturo Torres
, Mario Moreno
, Pedro Rosales
, Miguel Dominguez
, Alfonso Torres
, Alfredo Morales
, Adrian Itzmoyotl
, Javier De La Hidalga

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, we study the effect of the deposition RF-power on the structural, optical and electrical properties of hydrogenated nanocrystalline silicon-germanium (nc-SiGe:H) thin films obtained by plasma enhanced chemical vapor deposition (PECVD) at substrate temperature of 200 °C. The objective is to produce films with high crystalline fraction in order to be used as active layers in thin film transistors (TFTs). Bottom-gate (BG) thin film transistors were fabricated with nc-SiGe:H active layers, deposited at different RF-power. Values of ON-OFF current ratio, subthreshold slope and threshold voltage of 10⁵, 0.12 V/dec and 0.9 V, respectively, were obtained on TFTs with the nc-SiGe:H active layer deposited at 25 W.

Original language	English
Article number	190264
Journal	EPJ Applied Physics
Volume	89
Issue number	1
DOIs	https://doi.org/10.1051/epjap/2020190264
Publication status	Published - 1 Jan 2020

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title = "Study of nanocrystalline silicon-germanium for the development of thin film transistors",

abstract = "In this work, we study the effect of the deposition RF-power on the structural, optical and electrical properties of hydrogenated nanocrystalline silicon-germanium (nc-SiGe:H) thin films obtained by plasma enhanced chemical vapor deposition (PECVD) at substrate temperature of 200 °C. The objective is to produce films with high crystalline fraction in order to be used as active layers in thin film transistors (TFTs). Bottom-gate (BG) thin film transistors were fabricated with nc-SiGe:H active layers, deposited at different RF-power. Values of ON-OFF current ratio, subthreshold slope and threshold voltage of 105, 0.12 V/dec and 0.9 V, respectively, were obtained on TFTs with the nc-SiGe:H active layer deposited at 25 W.",

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T1 - Study of nanocrystalline silicon-germanium for the development of thin film transistors

AU - Kleider, Jean Paul

AU - Johnson, Erik

AU - Brüggemann, Rudolf

AU - Torres, Arturo

AU - Moreno, Mario

AU - Rosales, Pedro

AU - Dominguez, Miguel

AU - Torres, Alfonso

AU - Morales, Alfredo

AU - Itzmoyotl, Adrian

AU - De La Hidalga, Javier

PY - 2020/1/1

Y1 - 2020/1/1

N2 - In this work, we study the effect of the deposition RF-power on the structural, optical and electrical properties of hydrogenated nanocrystalline silicon-germanium (nc-SiGe:H) thin films obtained by plasma enhanced chemical vapor deposition (PECVD) at substrate temperature of 200 °C. The objective is to produce films with high crystalline fraction in order to be used as active layers in thin film transistors (TFTs). Bottom-gate (BG) thin film transistors were fabricated with nc-SiGe:H active layers, deposited at different RF-power. Values of ON-OFF current ratio, subthreshold slope and threshold voltage of 105, 0.12 V/dec and 0.9 V, respectively, were obtained on TFTs with the nc-SiGe:H active layer deposited at 25 W.

AB - In this work, we study the effect of the deposition RF-power on the structural, optical and electrical properties of hydrogenated nanocrystalline silicon-germanium (nc-SiGe:H) thin films obtained by plasma enhanced chemical vapor deposition (PECVD) at substrate temperature of 200 °C. The objective is to produce films with high crystalline fraction in order to be used as active layers in thin film transistors (TFTs). Bottom-gate (BG) thin film transistors were fabricated with nc-SiGe:H active layers, deposited at different RF-power. Values of ON-OFF current ratio, subthreshold slope and threshold voltage of 105, 0.12 V/dec and 0.9 V, respectively, were obtained on TFTs with the nc-SiGe:H active layer deposited at 25 W.

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DO - 10.1051/epjap/2020190264

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JO - EPJ Applied Physics

JF - EPJ Applied Physics

IS - 1

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ER -

Study of nanocrystalline silicon-germanium for the development of thin film transistors

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