Study of pm-SiGe:H thin films for p-i-n devices and tandem solar cells

M. E. Gueunier; J. P. Kleider; P. Chatterjee; P. Roca i Cabarrocas; Y. Poissant

doi:10.1016/S0040-6090(02)01196-3

Study of pm-SiGe:H thin films for p-i-n devices and tandem solar cells

M. E. Gueunier, J. P. Kleider, P. Chatterjee, P. Roca i Cabarrocas, Y. Poissant

Research output: Contribution to journal › Conference article › peer-review

Abstract

Polymorphous silicon-germanium (pm-SiGe:H) thin films with Ge contents varying from 1 to 35% were fabricated by plasma enhanced chemical vapour deposition in a high pressure range (1350 mtorr) and under high hydrogen dilution. The electrical and optical properties of these films were studied using a set of complementary techniques. These materials were then incorporated in the i layer of p-i-n solar cells. The performance of such solar cells and the use of these pm-SiGe alloys as the bottom cell of tandem pm-Si:H/pm-SiGe:H cells are finally discussed with the help of numerical simulations.

Original language	English
Pages (from-to)	247-251
Number of pages	5
Journal	Thin Solid Films
Volume	427
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(02)01196-3
Publication status	Published - 3 Mar 2003
Event	E-MRS, K - Strasbourg, France Duration: 18 Jun 2003 → 21 Jun 2003

Keywords

Silicon-germanium alloys
Simulation
Solar cells

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10.1016/S0040-6090(02)01196-3

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title = "Study of pm-SiGe:H thin films for p-i-n devices and tandem solar cells",

abstract = "Polymorphous silicon-germanium (pm-SiGe:H) thin films with Ge contents varying from 1 to 35\% were fabricated by plasma enhanced chemical vapour deposition in a high pressure range (1350 mtorr) and under high hydrogen dilution. The electrical and optical properties of these films were studied using a set of complementary techniques. These materials were then incorporated in the i layer of p-i-n solar cells. The performance of such solar cells and the use of these pm-SiGe alloys as the bottom cell of tandem pm-Si:H/pm-SiGe:H cells are finally discussed with the help of numerical simulations.",

keywords = "Silicon-germanium alloys, Simulation, Solar cells",

author = "Gueunier, \{M. E.\} and Kleider, \{J. P.\} and P. Chatterjee and \{Roca i Cabarrocas\}, P. and Y. Poissant",

year = "2003",

month = mar,

day = "3",

doi = "10.1016/S0040-6090(02)01196-3",

language = "English",

volume = "427",

pages = "247--251",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "1-2",

note = "E-MRS, K ; Conference date: 18-06-2003 Through 21-06-2003",

}

TY - JOUR

T1 - Study of pm-SiGe:H thin films for p-i-n devices and tandem solar cells

AU - Gueunier, M. E.

AU - Kleider, J. P.

AU - Chatterjee, P.

AU - Roca i Cabarrocas, P.

AU - Poissant, Y.

PY - 2003/3/3

Y1 - 2003/3/3

N2 - Polymorphous silicon-germanium (pm-SiGe:H) thin films with Ge contents varying from 1 to 35% were fabricated by plasma enhanced chemical vapour deposition in a high pressure range (1350 mtorr) and under high hydrogen dilution. The electrical and optical properties of these films were studied using a set of complementary techniques. These materials were then incorporated in the i layer of p-i-n solar cells. The performance of such solar cells and the use of these pm-SiGe alloys as the bottom cell of tandem pm-Si:H/pm-SiGe:H cells are finally discussed with the help of numerical simulations.

AB - Polymorphous silicon-germanium (pm-SiGe:H) thin films with Ge contents varying from 1 to 35% were fabricated by plasma enhanced chemical vapour deposition in a high pressure range (1350 mtorr) and under high hydrogen dilution. The electrical and optical properties of these films were studied using a set of complementary techniques. These materials were then incorporated in the i layer of p-i-n solar cells. The performance of such solar cells and the use of these pm-SiGe alloys as the bottom cell of tandem pm-Si:H/pm-SiGe:H cells are finally discussed with the help of numerical simulations.

KW - Silicon-germanium alloys

KW - Simulation

KW - Solar cells

U2 - 10.1016/S0040-6090(02)01196-3

DO - 10.1016/S0040-6090(02)01196-3

M3 - Conference article

AN - SCOPUS:0037416755

SN - 0040-6090

VL - 427

SP - 247

EP - 251

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - E-MRS, K

Y2 - 18 June 2003 through 21 June 2003

ER -

Study of pm-SiGe:H thin films for p-i-n devices and tandem solar cells

Abstract

Keywords

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