Abstract
The growth of silicon nanocrystals in high pressure and high dilution silane plasmas is investigated by using the temporal evolution of the self-bias on the radio frequency electrode and transmission electron microscopy. A square-wave-modulated plasma was used in order to control the growth of monodispersed nanoparticles with sizes smaller than 12 nm. To this end, the plasma on time was kept below 1 s. The radial growth rate of nanoparticles was varied in the range from 7.5 to 75 nms by changing silane partial pressure. Nanoparticles grown in silane-helium discharges have been found amorphous while they are crystalline in silane-hydrogen-argon discharges. Surprisingly, the crystallization in the gaseous phase does not depend on how slow or fast the particles grow but on the presence of atomic hydrogen.
| Original language | English |
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| Article number | 111501 |
| Journal | Applied Physics Letters |
| Volume | 91 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 21 Sept 2007 |