Study of the characteristics of 1.55 μm quantum dash/dot semiconductor lasers on InP substrate

D. Zhou; R. Piron; F. Grillot; O. Dehaese; E. Homeyer; M. Dontabactouny; T. Batte; K. Tavernier; J. Even; S. Loualiche

doi:10.1063/1.3005194

Study of the characteristics of 1.55 μm quantum dash/dot semiconductor lasers on InP substrate

D. Zhou, R. Piron, F. Grillot, O. Dehaese, E. Homeyer, M. Dontabactouny, T. Batte, K. Tavernier, J. Even, S. Loualiche

INSA Rennes

Research output: Contribution to journal › Article › peer-review

Abstract

InAs quantum dash (QDH) and quantum dot (QD) lasers grown by molecular beam epitaxy on InP substrate are studied. The laser active zones with multiple stacked layers exhibit lasing wavelength at 1.55 μm. On these devices, the experimental threshold current density reaches its minimum value for a double stacked QDH/QD structure. Other basic laser properties such as gain and quantum efficiency are compared. QD lasers exhibit better threshold current densities but equivalent modal gain per layer than QDH. Finally, the analysis of the modal gain on QD lasers shows a promising potential for improvement.

Original language	English
Article number	161104
Journal	Applied Physics Letters
Volume	93
Issue number	16
DOIs	https://doi.org/10.1063/1.3005194
Publication status	Published - 3 Nov 2008
Externally published	Yes

Access to Document

10.1063/1.3005194

Cite this

@article{0f1015c8e81e4717820b3e5e7ca09738,

title = "Study of the characteristics of 1.55 μm quantum dash/dot semiconductor lasers on InP substrate",

abstract = "InAs quantum dash (QDH) and quantum dot (QD) lasers grown by molecular beam epitaxy on InP substrate are studied. The laser active zones with multiple stacked layers exhibit lasing wavelength at 1.55 μm. On these devices, the experimental threshold current density reaches its minimum value for a double stacked QDH/QD structure. Other basic laser properties such as gain and quantum efficiency are compared. QD lasers exhibit better threshold current densities but equivalent modal gain per layer than QDH. Finally, the analysis of the modal gain on QD lasers shows a promising potential for improvement.",

author = "D. Zhou and R. Piron and F. Grillot and O. Dehaese and E. Homeyer and M. Dontabactouny and T. Batte and K. Tavernier and J. Even and S. Loualiche",

year = "2008",

month = nov,

day = "3",

doi = "10.1063/1.3005194",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "16",

}

TY - JOUR

T1 - Study of the characteristics of 1.55 μm quantum dash/dot semiconductor lasers on InP substrate

AU - Zhou, D.

AU - Piron, R.

AU - Grillot, F.

AU - Dehaese, O.

AU - Homeyer, E.

AU - Dontabactouny, M.

AU - Batte, T.

AU - Tavernier, K.

AU - Even, J.

AU - Loualiche, S.

PY - 2008/11/3

Y1 - 2008/11/3

N2 - InAs quantum dash (QDH) and quantum dot (QD) lasers grown by molecular beam epitaxy on InP substrate are studied. The laser active zones with multiple stacked layers exhibit lasing wavelength at 1.55 μm. On these devices, the experimental threshold current density reaches its minimum value for a double stacked QDH/QD structure. Other basic laser properties such as gain and quantum efficiency are compared. QD lasers exhibit better threshold current densities but equivalent modal gain per layer than QDH. Finally, the analysis of the modal gain on QD lasers shows a promising potential for improvement.

AB - InAs quantum dash (QDH) and quantum dot (QD) lasers grown by molecular beam epitaxy on InP substrate are studied. The laser active zones with multiple stacked layers exhibit lasing wavelength at 1.55 μm. On these devices, the experimental threshold current density reaches its minimum value for a double stacked QDH/QD structure. Other basic laser properties such as gain and quantum efficiency are compared. QD lasers exhibit better threshold current densities but equivalent modal gain per layer than QDH. Finally, the analysis of the modal gain on QD lasers shows a promising potential for improvement.

U2 - 10.1063/1.3005194

DO - 10.1063/1.3005194

M3 - Article

AN - SCOPUS:54949121341

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 161104

ER -

Study of the characteristics of 1.55 μm quantum dash/dot semiconductor lasers on InP substrate

Abstract

Access to Document

Fingerprint

Cite this