Study of the effects of different fractions of large grains of μc-Si:H:F films on the infrared absorption on thin film solar cells

M. Moreno; R. Boubekri; P. Roca I Cabarrocas

doi:10.1016/j.solmat.2011.05.030

Study of the effects of different fractions of large grains of μc-Si:H:F films on the infrared absorption on thin film solar cells

M. Moreno, R. Boubekri, P. Roca I Cabarrocas

Research output: Contribution to journal › Article › peer-review

Abstract

We have studied microcrystalline silicon films (μc-Si:H:F) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) at low temperature (∼200 °C) from SiF ₄, H ₂ and Ar gas mixtures. We found that the H ₂/SiF ₄ ratio plays an important role on the crystalline fraction of the films, specifically on the films grain size, deduced from UVvis spectroscopic ellipsometry. We observed that higher crystallinity (and larger fraction of large-grains) in the films provides a higher absorption on the infrared (IR) region, which is of particular interest for tandem solar cells. PIN solar cells were fabricated with intrinsic μc-Si:H:F films of different crystallinity (and different fraction of large grains) in order to observe their effect on the solar cells IR absorption and on the cells performance characteristics.

Original language	English
Pages (from-to)	16-20
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	100
DOIs	https://doi.org/10.1016/j.solmat.2011.05.030
Publication status	Published - 1 May 2012

Keywords

PECVD
Plasma
Solar cells
Thin films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solmat.2011.05.030

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@article{02624811dbb4428a903b5f262dc655e2,

title = "Study of the effects of different fractions of large grains of μc-Si:H:F films on the infrared absorption on thin film solar cells",

abstract = "We have studied microcrystalline silicon films (μc-Si:H:F) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) at low temperature (∼200 °C) from SiF 4, H 2 and Ar gas mixtures. We found that the H 2/SiF 4 ratio plays an important role on the crystalline fraction of the films, specifically on the films grain size, deduced from UVvis spectroscopic ellipsometry. We observed that higher crystallinity (and larger fraction of large-grains) in the films provides a higher absorption on the infrared (IR) region, which is of particular interest for tandem solar cells. PIN solar cells were fabricated with intrinsic μc-Si:H:F films of different crystallinity (and different fraction of large grains) in order to observe their effect on the solar cells IR absorption and on the cells performance characteristics.",

keywords = "PECVD, Plasma, Solar cells, Thin films",

author = "M. Moreno and R. Boubekri and \{Roca I Cabarrocas\}, P.",

year = "2012",

month = may,

day = "1",

doi = "10.1016/j.solmat.2011.05.030",

language = "English",

volume = "100",

pages = "16--20",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

}

TY - JOUR

T1 - Study of the effects of different fractions of large grains of μc-Si:H:F films on the infrared absorption on thin film solar cells

AU - Moreno, M.

AU - Boubekri, R.

AU - Roca I Cabarrocas, P.

PY - 2012/5/1

Y1 - 2012/5/1

N2 - We have studied microcrystalline silicon films (μc-Si:H:F) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) at low temperature (∼200 °C) from SiF 4, H 2 and Ar gas mixtures. We found that the H 2/SiF 4 ratio plays an important role on the crystalline fraction of the films, specifically on the films grain size, deduced from UVvis spectroscopic ellipsometry. We observed that higher crystallinity (and larger fraction of large-grains) in the films provides a higher absorption on the infrared (IR) region, which is of particular interest for tandem solar cells. PIN solar cells were fabricated with intrinsic μc-Si:H:F films of different crystallinity (and different fraction of large grains) in order to observe their effect on the solar cells IR absorption and on the cells performance characteristics.

AB - We have studied microcrystalline silicon films (μc-Si:H:F) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) at low temperature (∼200 °C) from SiF 4, H 2 and Ar gas mixtures. We found that the H 2/SiF 4 ratio plays an important role on the crystalline fraction of the films, specifically on the films grain size, deduced from UVvis spectroscopic ellipsometry. We observed that higher crystallinity (and larger fraction of large-grains) in the films provides a higher absorption on the infrared (IR) region, which is of particular interest for tandem solar cells. PIN solar cells were fabricated with intrinsic μc-Si:H:F films of different crystallinity (and different fraction of large grains) in order to observe their effect on the solar cells IR absorption and on the cells performance characteristics.

KW - PECVD

KW - Plasma

KW - Solar cells

KW - Thin films

U2 - 10.1016/j.solmat.2011.05.030

DO - 10.1016/j.solmat.2011.05.030

M3 - Article

AN - SCOPUS:84857786537

SN - 0927-0248

VL - 100

SP - 16

EP - 20

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Study of the effects of different fractions of large grains of μc-Si:H:F films on the infrared absorption on thin film solar cells

Abstract

Keywords

UN SDGs

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