Study of the metastable light-induced changes in hydrogenated amorphous silicon by capacitance measurements

Vetrella U. Besi; G. Fameli; P. T. Menna; P. Roca I Cabarrocas; K. Zellama

Study of the metastable light-induced changes in hydrogenated amorphous silicon by capacitance measurements

Vetrella U. Besi
, G. Fameli
, P. T. Menna
, P. Roca I Cabarrocas
, K. Zellama

ENEA/FARE-FOTO Centro Ricerche

Research output: Contribution to journal › Conference article › peer-review

Abstract

The density of defect states at the Fermi level, g(E_F), has been determined by capacitance vs. temperature (C-T) experiments carried out at different frequencies for a series of a-Si:H and a-SiGe:H samples. The films were deposited at different temperatures in a Schottky configuration, and they were investigated in both the annealed state and the light-soaked state. Coplanar conductivity measurements and infrared analysis were also carried out. Pronounced changes in g(E_F) as measured by the C-T technique have been attributed to the creation of metastable defects other than neutral DBs following light exposure. The hydrogen content plays an important role in determining the amount of the change.

Original language	English
Pages (from-to)	207-211
Number of pages	5
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	1
Publication status	Published - 1 Dec 1988
Externally published	Yes
Event	Twentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA Duration: 26 Sept 1988 → 30 Sept 1988

Cite this

@article{790aa1fefdaf42558ad03d3372121b41,

title = "Study of the metastable light-induced changes in hydrogenated amorphous silicon by capacitance measurements",

abstract = "The density of defect states at the Fermi level, g(EF), has been determined by capacitance vs. temperature (C-T) experiments carried out at different frequencies for a series of a-Si:H and a-SiGe:H samples. The films were deposited at different temperatures in a Schottky configuration, and they were investigated in both the annealed state and the light-soaked state. Coplanar conductivity measurements and infrared analysis were also carried out. Pronounced changes in g(EF) as measured by the C-T technique have been attributed to the creation of metastable defects other than neutral DBs following light exposure. The hydrogen content plays an important role in determining the amount of the change.",

author = "Besi, \{Vetrella U.\} and G. Fameli and Menna, \{P. T.\} and \{Roca I Cabarrocas\}, P. and K. Zellama",

year = "1988",

month = dec,

day = "1",

language = "English",

volume = "1",

pages = "207--211",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Twentieth IEEE Photovoltaic Specialists Conference - 1988 ; Conference date: 26-09-1988 Through 30-09-1988",

}

TY - JOUR

T1 - Study of the metastable light-induced changes in hydrogenated amorphous silicon by capacitance measurements

AU - Besi, Vetrella U.

AU - Fameli, G.

AU - Menna, P. T.

AU - Roca I Cabarrocas, P.

AU - Zellama, K.

PY - 1988/12/1

Y1 - 1988/12/1

N2 - The density of defect states at the Fermi level, g(EF), has been determined by capacitance vs. temperature (C-T) experiments carried out at different frequencies for a series of a-Si:H and a-SiGe:H samples. The films were deposited at different temperatures in a Schottky configuration, and they were investigated in both the annealed state and the light-soaked state. Coplanar conductivity measurements and infrared analysis were also carried out. Pronounced changes in g(EF) as measured by the C-T technique have been attributed to the creation of metastable defects other than neutral DBs following light exposure. The hydrogen content plays an important role in determining the amount of the change.

AB - The density of defect states at the Fermi level, g(EF), has been determined by capacitance vs. temperature (C-T) experiments carried out at different frequencies for a series of a-Si:H and a-SiGe:H samples. The films were deposited at different temperatures in a Schottky configuration, and they were investigated in both the annealed state and the light-soaked state. Coplanar conductivity measurements and infrared analysis were also carried out. Pronounced changes in g(EF) as measured by the C-T technique have been attributed to the creation of metastable defects other than neutral DBs following light exposure. The hydrogen content plays an important role in determining the amount of the change.

M3 - Conference article

AN - SCOPUS:0024186272

SN - 0160-8371

VL - 1

SP - 207

EP - 211

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - Twentieth IEEE Photovoltaic Specialists Conference - 1988

Y2 - 26 September 1988 through 30 September 1988

ER -

Study of the metastable light-induced changes in hydrogenated amorphous silicon by capacitance measurements

Abstract

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