Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures

L. Hamui; B. M. Monroy; P. Roca I Cabarrocas; G. Santana

doi:10.1109/PVSC.2014.6925026

Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures

L. Hamui
, B. M. Monroy
, P. Roca I Cabarrocas
, G. Santana

Universidad Nacional Autónoma de México

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This work describes a study performed on pm-Si:H PIN and NIP structures, deposited by PECVD. We show the effect of light-soaking (AM1.5) on pm-Si:H thin films structures optical properties. We propose a model for long range diffusion of hydrogen through the whole device. From the evolution of Raman spectra after annealing, we show that this long range motion of hydrogen causes a hydrogen rearrangement on the film along with a shift on the exodiffusion peaks explaining the degradation process in this type of devices. As a result we determined that for the PIN structure a hydrogen diffusion barrier is generated by defects, which causes a less degradation of its optoelectronic properties under illumination, and a more stable device during operation is expected.

Original language	English
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	737-741
Number of pages	5
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6925026
Publication status	Published - 15 Oct 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Photovoltaic structures
polymorphous silicon
raman
spectroscopic ellipsometry
thin films

Access to Document

10.1109/PVSC.2014.6925026

Cite this

Hamui, L., Monroy, B. M., Roca I Cabarrocas, P., & Santana, G. (2014). Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 737-741). Article 6925026 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925026

Hamui, L. ; Monroy, B. M. ; Roca I Cabarrocas, P. et al. / Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 737-741 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

@inproceedings{2379a70ef8e24a57a6fc7ac030e2bda5,

title = "Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures",

abstract = "This work describes a study performed on pm-Si:H PIN and NIP structures, deposited by PECVD. We show the effect of light-soaking (AM1.5) on pm-Si:H thin films structures optical properties. We propose a model for long range diffusion of hydrogen through the whole device. From the evolution of Raman spectra after annealing, we show that this long range motion of hydrogen causes a hydrogen rearrangement on the film along with a shift on the exodiffusion peaks explaining the degradation process in this type of devices. As a result we determined that for the PIN structure a hydrogen diffusion barrier is generated by defects, which causes a less degradation of its optoelectronic properties under illumination, and a more stable device during operation is expected.",

keywords = "Photovoltaic structures, polymorphous silicon, raman, spectroscopic ellipsometry, thin films",

author = "L. Hamui and Monroy, \{B. M.\} and \{Roca I Cabarrocas\}, P. and G. Santana",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

year = "2014",

month = oct,

day = "15",

doi = "10.1109/PVSC.2014.6925026",

language = "English",

series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "737--741",

booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

}

Hamui, L, Monroy, BM, Roca I Cabarrocas, P & Santana, G 2014, Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925026, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 737-741, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 8/06/14. https://doi.org/10.1109/PVSC.2014.6925026

Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures. / Hamui, L.; Monroy, B. M.; Roca I Cabarrocas, P. et al.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 737-741 6925026 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures

AU - Hamui, L.

AU - Monroy, B. M.

AU - Roca I Cabarrocas, P.

AU - Santana, G.

PY - 2014/10/15

Y1 - 2014/10/15

N2 - This work describes a study performed on pm-Si:H PIN and NIP structures, deposited by PECVD. We show the effect of light-soaking (AM1.5) on pm-Si:H thin films structures optical properties. We propose a model for long range diffusion of hydrogen through the whole device. From the evolution of Raman spectra after annealing, we show that this long range motion of hydrogen causes a hydrogen rearrangement on the film along with a shift on the exodiffusion peaks explaining the degradation process in this type of devices. As a result we determined that for the PIN structure a hydrogen diffusion barrier is generated by defects, which causes a less degradation of its optoelectronic properties under illumination, and a more stable device during operation is expected.

AB - This work describes a study performed on pm-Si:H PIN and NIP structures, deposited by PECVD. We show the effect of light-soaking (AM1.5) on pm-Si:H thin films structures optical properties. We propose a model for long range diffusion of hydrogen through the whole device. From the evolution of Raman spectra after annealing, we show that this long range motion of hydrogen causes a hydrogen rearrangement on the film along with a shift on the exodiffusion peaks explaining the degradation process in this type of devices. As a result we determined that for the PIN structure a hydrogen diffusion barrier is generated by defects, which causes a less degradation of its optoelectronic properties under illumination, and a more stable device during operation is expected.

KW - Photovoltaic structures

KW - polymorphous silicon

KW - raman

KW - spectroscopic ellipsometry

KW - thin films

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DO - 10.1109/PVSC.2014.6925026

M3 - Conference contribution

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T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

SP - 737

EP - 741

BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014

Y2 - 8 June 2014 through 13 June 2014

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Hamui L, Monroy BM, Roca I Cabarrocas P, Santana G. Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 737-741. 6925026. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). doi: 10.1109/PVSC.2014.6925026

Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures

Abstract

Publication series

Conference

UN SDGs

Keywords

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