TY - JOUR
T1 - Study of transport, trapping and recombination mechanisms in microcrystalline silicon by transient photoconductivity
AU - Vanderhaghen, R.
AU - Kasouit, S.
AU - Damon-Lacoste, J.
AU - Liu, F.
AU - Roca i Cabarrocas, P.
PY - 2004/6/15
Y1 - 2004/6/15
N2 - We have studied different sets of microcrystalline silicon films deposited by PECVD and plasma assisted HWCVD at different thicknesses and microstructures. Measurements by time-resolved microwave conductivity (TRMC) give a mobility μTRMC, diffusion-induced mobility μDTRMC and field effect mobility μFE. At high carrier density, the dependence of the TRMC signal on carrier density is sublinear, with slope γ, indicating dominance of shallow trap recombinations. The decay of the signal shows two slopes τ1 and τ2. From the analysis of μTRMC, μDTRMC, μFE, γ, τ1 and τ2 for different samples, we discuss the contribution of grains, grain boundaries, and column boundaries to the mobility, to the fast recombination process, and to the lifetime.
AB - We have studied different sets of microcrystalline silicon films deposited by PECVD and plasma assisted HWCVD at different thicknesses and microstructures. Measurements by time-resolved microwave conductivity (TRMC) give a mobility μTRMC, diffusion-induced mobility μDTRMC and field effect mobility μFE. At high carrier density, the dependence of the TRMC signal on carrier density is sublinear, with slope γ, indicating dominance of shallow trap recombinations. The decay of the signal shows two slopes τ1 and τ2. From the analysis of μTRMC, μDTRMC, μFE, γ, τ1 and τ2 for different samples, we discuss the contribution of grains, grain boundaries, and column boundaries to the mobility, to the fast recombination process, and to the lifetime.
U2 - 10.1016/j.jnoncrysol.2004.02.068
DO - 10.1016/j.jnoncrysol.2004.02.068
M3 - Article
AN - SCOPUS:2942530691
SN - 0022-3093
VL - 338-340
SP - 336
EP - 340
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - 1 SPEC. ISS.
ER -