Substrate temperature dependence of the growth kinetics and opto-electronic properties of a-Si:H films deposited by RF glow discharge

P. Roca i Cabarrocas; J. Z. Liu; H. R. Park; A. Maruyama; S. Wagner

doi:10.1016/0022-3093(89)90109-9

Substrate temperature dependence of the growth kinetics and opto-electronic properties of a-Si:H films deposited by RF glow discharge

P. Roca i Cabarrocas
, J. Z. Liu
, H. R. Park
, A. Maruyama
, S. Wagner

Princeton University

Research output: Contribution to journal › Article › peer-review

Abstract

We report the effects of the substrate temperature T_s on the growth kinetics and the opto-electronic properties of a-Si:H films deposited by rf glow discharge. In the low rf power regime, we observe an increase of the a-Si:H deposition rate and a decrease of the a-Si:H work function as we increase the substrate temperature. Moreover, the density of bulk defect states shows a broad minimum as a function of T_s. In particular, a-Si:H films with defect densities as low as 2×10¹⁵ cm^-3 can be deposited at 150°C. However, preliminary light-soaking experiments show that light-induced degradation is stronger for a-Si:H deposited at lower T_s.

Original language	English
Pages (from-to)	190-192
Number of pages	3
Journal	Journal of Non-Crystalline Solids
Volume	114
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(89)90109-9
Publication status	Published - 1 Dec 1989
Externally published	Yes

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@article{18bfb85f10bf4c0f897781b756227fb6,

title = "Substrate temperature dependence of the growth kinetics and opto-electronic properties of a-Si:H films deposited by RF glow discharge",

abstract = "We report the effects of the substrate temperature Ts on the growth kinetics and the opto-electronic properties of a-Si:H films deposited by rf glow discharge. In the low rf power regime, we observe an increase of the a-Si:H deposition rate and a decrease of the a-Si:H work function as we increase the substrate temperature. Moreover, the density of bulk defect states shows a broad minimum as a function of Ts. In particular, a-Si:H films with defect densities as low as 2×1015 cm-3 can be deposited at 150°C. However, preliminary light-soaking experiments show that light-induced degradation is stronger for a-Si:H deposited at lower Ts.",

author = "\{i Cabarrocas\}, \{P. Roca\} and Liu, \{J. Z.\} and Park, \{H. R.\} and A. Maruyama and S. Wagner",

year = "1989",

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doi = "10.1016/0022-3093(89)90109-9",

language = "English",

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T1 - Substrate temperature dependence of the growth kinetics and opto-electronic properties of a-Si:H films deposited by RF glow discharge

AU - i Cabarrocas, P. Roca

AU - Liu, J. Z.

AU - Park, H. R.

AU - Maruyama, A.

AU - Wagner, S.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - We report the effects of the substrate temperature Ts on the growth kinetics and the opto-electronic properties of a-Si:H films deposited by rf glow discharge. In the low rf power regime, we observe an increase of the a-Si:H deposition rate and a decrease of the a-Si:H work function as we increase the substrate temperature. Moreover, the density of bulk defect states shows a broad minimum as a function of Ts. In particular, a-Si:H films with defect densities as low as 2×1015 cm-3 can be deposited at 150°C. However, preliminary light-soaking experiments show that light-induced degradation is stronger for a-Si:H deposited at lower Ts.

AB - We report the effects of the substrate temperature Ts on the growth kinetics and the opto-electronic properties of a-Si:H films deposited by rf glow discharge. In the low rf power regime, we observe an increase of the a-Si:H deposition rate and a decrease of the a-Si:H work function as we increase the substrate temperature. Moreover, the density of bulk defect states shows a broad minimum as a function of Ts. In particular, a-Si:H films with defect densities as low as 2×1015 cm-3 can be deposited at 150°C. However, preliminary light-soaking experiments show that light-induced degradation is stronger for a-Si:H deposited at lower Ts.

U2 - 10.1016/0022-3093(89)90109-9

DO - 10.1016/0022-3093(89)90109-9

M3 - Article

AN - SCOPUS:0024822561

SN - 0022-3093

VL - 114

SP - 190

EP - 192

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

ER -

Substrate temperature dependence of the growth kinetics and opto-electronic properties of a-Si:H films deposited by RF glow discharge

Abstract

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