Substrate versus superstrate configuration for stable thin film silicon solar cells

Ka Hyun Kim; Samir Kasouit; Erik V. Johnson; Pere Roca I Cabarrocas

doi:10.1016/j.solmat.2013.05.045

Substrate versus superstrate configuration for stable thin film silicon solar cells

Ka Hyun Kim
, Samir Kasouit
, Erik V. Johnson
, Pere Roca I Cabarrocas

Korea Institute of Energy Research
TOTAL S.A.
Total
Institut polytechnique de Paris

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

We report on the light-induced degradation kinetics of hydrogenated polymorphous silicon (pm-Si:H) solar cells having either substrate or superstrate device configuration. Both types of devices were exposed to light-soaking for 500 h. While pm-Si:H superstrate solar cells showed strong degradation (up to 60%) under mercury vapor lamp illumination, we have found that substrate structures are remarkably stable. The difference between the two types of devices is shown to be related to interface delamination which only occurs in superstrate devices. We further demonstrate a strong correlation between short-circuit current density decrease upon light-soaking and solar cell area loss.

Original language	English
Pages (from-to)	124-128
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	119
DOIs	https://doi.org/10.1016/j.solmat.2013.05.045
Publication status	Published - 27 Jun 2013

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Amorphous silicon
Defect formation
Hydrogen
Light-induced degradation
Nanocrystalline
PECVD

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10.1016/j.solmat.2013.05.045

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title = "Substrate versus superstrate configuration for stable thin film silicon solar cells",

abstract = "We report on the light-induced degradation kinetics of hydrogenated polymorphous silicon (pm-Si:H) solar cells having either substrate or superstrate device configuration. Both types of devices were exposed to light-soaking for 500 h. While pm-Si:H superstrate solar cells showed strong degradation (up to 60\%) under mercury vapor lamp illumination, we have found that substrate structures are remarkably stable. The difference between the two types of devices is shown to be related to interface delamination which only occurs in superstrate devices. We further demonstrate a strong correlation between short-circuit current density decrease upon light-soaking and solar cell area loss.",

keywords = "Amorphous silicon, Defect formation, Hydrogen, Light-induced degradation, Nanocrystalline, PECVD",

author = "Kim, \{Ka Hyun\} and Samir Kasouit and Johnson, \{Erik V.\} and \{Roca I Cabarrocas\}, Pere",

year = "2013",

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doi = "10.1016/j.solmat.2013.05.045",

language = "English",

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journal = "Solar Energy Materials and Solar Cells",

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T1 - Substrate versus superstrate configuration for stable thin film silicon solar cells

AU - Kim, Ka Hyun

AU - Kasouit, Samir

AU - Johnson, Erik V.

AU - Roca I Cabarrocas, Pere

PY - 2013/6/27

Y1 - 2013/6/27

N2 - We report on the light-induced degradation kinetics of hydrogenated polymorphous silicon (pm-Si:H) solar cells having either substrate or superstrate device configuration. Both types of devices were exposed to light-soaking for 500 h. While pm-Si:H superstrate solar cells showed strong degradation (up to 60%) under mercury vapor lamp illumination, we have found that substrate structures are remarkably stable. The difference between the two types of devices is shown to be related to interface delamination which only occurs in superstrate devices. We further demonstrate a strong correlation between short-circuit current density decrease upon light-soaking and solar cell area loss.

AB - We report on the light-induced degradation kinetics of hydrogenated polymorphous silicon (pm-Si:H) solar cells having either substrate or superstrate device configuration. Both types of devices were exposed to light-soaking for 500 h. While pm-Si:H superstrate solar cells showed strong degradation (up to 60%) under mercury vapor lamp illumination, we have found that substrate structures are remarkably stable. The difference between the two types of devices is shown to be related to interface delamination which only occurs in superstrate devices. We further demonstrate a strong correlation between short-circuit current density decrease upon light-soaking and solar cell area loss.

KW - Amorphous silicon

KW - Defect formation

KW - Hydrogen

KW - Light-induced degradation

KW - Nanocrystalline

KW - PECVD

U2 - 10.1016/j.solmat.2013.05.045

DO - 10.1016/j.solmat.2013.05.045

M3 - Article

AN - SCOPUS:84884906814

SN - 0927-0248

VL - 119

SP - 124

EP - 128

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Substrate versus superstrate configuration for stable thin film silicon solar cells

Abstract

UN SDGs

Keywords

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