Abstract
We have successfully obtained high-quality strongly underdoped Bi2Sr2CaCu2O8+x, (Bi-2212) single crystals by growth in reduced oxygen partial pressure. Doping levels could subsequently be varied from underdoped through optimally doped to overdoped by a straightforward post-annealing treatment. We have characterized the obtained crystals by low-field magnetic screening experiments as well as by reversible magnetization in fields to several tesla and report the values of the penetration depth and carrier density.
| Original language | English |
|---|---|
| Article number | 024502 |
| Pages (from-to) | 245021-245026 |
| Number of pages | 6 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 66 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1 Jul 2002 |
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