Suppression of leakage current in Schottky barrier metal-oxide-semiconductor field-effect transistors

L. E. Calvet; H. Luebben; M. A. Reed; C. Wang; J. P. Snyder; J. R. Tucker

doi:10.1063/1.1425074

Suppression of leakage current in Schottky barrier metal-oxide-semiconductor field-effect transistors

L. E. Calvet
, H. Luebben
, M. A. Reed
, C. Wang
, J. P. Snyder
, J. R. Tucker

Yale University
Peripheral Imaging Corporation
Spinnaker Semiconductor
University of Illinois at Urbana-Champaign

Research output: Contribution to journal › Article › peer-review

Abstract

In this article we investigate the subthreshold behavior of PtSi source/drain Schottky barrier metal-oxide-semiconductor field-effect transistors. We demonstrate very large on/off ratios on bulk silicon devices and show that slight process variations can result in anomalous leakage paths that degrade the subthreshold swing and complicate investigations of device scaling.

Original language	English
Pages (from-to)	757-759
Number of pages	3
Journal	Journal of Applied Physics
Volume	91
Issue number	2
DOIs	https://doi.org/10.1063/1.1425074
Publication status	Published - 15 Jan 2002
Externally published	Yes

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title = "Suppression of leakage current in Schottky barrier metal-oxide-semiconductor field-effect transistors",

abstract = "In this article we investigate the subthreshold behavior of PtSi source/drain Schottky barrier metal-oxide-semiconductor field-effect transistors. We demonstrate very large on/off ratios on bulk silicon devices and show that slight process variations can result in anomalous leakage paths that degrade the subthreshold swing and complicate investigations of device scaling.",

author = "Calvet, \{L. E.\} and H. Luebben and Reed, \{M. A.\} and C. Wang and Snyder, \{J. P.\} and Tucker, \{J. R.\}",

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AU - Calvet, L. E.

AU - Luebben, H.

AU - Reed, M. A.

AU - Wang, C.

AU - Snyder, J. P.

AU - Tucker, J. R.

PY - 2002/1/15

Y1 - 2002/1/15

N2 - In this article we investigate the subthreshold behavior of PtSi source/drain Schottky barrier metal-oxide-semiconductor field-effect transistors. We demonstrate very large on/off ratios on bulk silicon devices and show that slight process variations can result in anomalous leakage paths that degrade the subthreshold swing and complicate investigations of device scaling.

AB - In this article we investigate the subthreshold behavior of PtSi source/drain Schottky barrier metal-oxide-semiconductor field-effect transistors. We demonstrate very large on/off ratios on bulk silicon devices and show that slight process variations can result in anomalous leakage paths that degrade the subthreshold swing and complicate investigations of device scaling.

UR - https://www.scopus.com/pages/publications/0037967604

U2 - 10.1063/1.1425074

DO - 10.1063/1.1425074

M3 - Article

AN - SCOPUS:0037967604

SN - 0021-8979

VL - 91

SP - 757

EP - 759

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Suppression of leakage current in Schottky barrier metal-oxide-semiconductor field-effect transistors

Abstract

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