Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds

L. Rondin; G. Dantelle; A. Slablab; F. Grosshans; F. Treussart; P. Bergonzo; S. Perruchas; T. Gacoin; M. Chaigneau; H. C. Chang; V. Jacques; J. F. Roch

doi:10.1103/PhysRevB.82.115449

Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds

L. Rondin
, G. Dantelle
, A. Slablab
, F. Grosshans
, F. Treussart
, P. Bergonzo
, S. Perruchas
, T. Gacoin
, M. Chaigneau
, H. C. Chang
, V. Jacques
, J. F. Roch

Laboratoire de Photonique Quantique et Moléculaire
CEA/UVSQ/CNRS
Institut polytechnique de Paris
Academia Sinica, Institute of Atomic and Molecular Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

We present a study of the charge state conversion of single nitrogen-vacancy (NV) defects hosted in nanodiamonds (NDs). We first show that the proportion of negatively charged NV^- defects, with respect to its neutral counterpart NV0, decreases with the size of the ND. We then propose a simple model based on a layer of electron traps located at the ND surface which is in good agreement with the recorded statistics. By using thermal oxidation to remove the shell of amorphous carbon around the NDs, we demonstrate a significant increase in the proportion of NV^- defects in 10 nm NDs. These results are invaluable for further understanding, control, and use of the unique properties of negatively charged NV defects in diamond.

Original language	English
Article number	115449
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	82
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevB.82.115449
Publication status	Published - 28 Sept 2010

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Rondin, L., Dantelle, G., Slablab, A., Grosshans, F., Treussart, F., Bergonzo, P., Perruchas, S., Gacoin, T., Chaigneau, M., Chang, H. C., Jacques, V., & Roch, J. F. (2010). Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds. Physical Review B - Condensed Matter and Materials Physics, 82(11), Article 115449. https://doi.org/10.1103/PhysRevB.82.115449

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title = "Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds",

abstract = "We present a study of the charge state conversion of single nitrogen-vacancy (NV) defects hosted in nanodiamonds (NDs). We first show that the proportion of negatively charged NV- defects, with respect to its neutral counterpart NV0, decreases with the size of the ND. We then propose a simple model based on a layer of electron traps located at the ND surface which is in good agreement with the recorded statistics. By using thermal oxidation to remove the shell of amorphous carbon around the NDs, we demonstrate a significant increase in the proportion of NV- defects in 10 nm NDs. These results are invaluable for further understanding, control, and use of the unique properties of negatively charged NV defects in diamond.",

author = "L. Rondin and G. Dantelle and A. Slablab and F. Grosshans and F. Treussart and P. Bergonzo and S. Perruchas and T. Gacoin and M. Chaigneau and Chang, \{H. C.\} and V. Jacques and Roch, \{J. F.\}",

year = "2010",

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doi = "10.1103/PhysRevB.82.115449",

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AU - Rondin, L.

AU - Dantelle, G.

AU - Slablab, A.

AU - Grosshans, F.

AU - Treussart, F.

AU - Bergonzo, P.

AU - Perruchas, S.

AU - Gacoin, T.

AU - Chaigneau, M.

AU - Chang, H. C.

AU - Jacques, V.

AU - Roch, J. F.

PY - 2010/9/28

Y1 - 2010/9/28

N2 - We present a study of the charge state conversion of single nitrogen-vacancy (NV) defects hosted in nanodiamonds (NDs). We first show that the proportion of negatively charged NV- defects, with respect to its neutral counterpart NV0, decreases with the size of the ND. We then propose a simple model based on a layer of electron traps located at the ND surface which is in good agreement with the recorded statistics. By using thermal oxidation to remove the shell of amorphous carbon around the NDs, we demonstrate a significant increase in the proportion of NV- defects in 10 nm NDs. These results are invaluable for further understanding, control, and use of the unique properties of negatively charged NV defects in diamond.

AB - We present a study of the charge state conversion of single nitrogen-vacancy (NV) defects hosted in nanodiamonds (NDs). We first show that the proportion of negatively charged NV- defects, with respect to its neutral counterpart NV0, decreases with the size of the ND. We then propose a simple model based on a layer of electron traps located at the ND surface which is in good agreement with the recorded statistics. By using thermal oxidation to remove the shell of amorphous carbon around the NDs, we demonstrate a significant increase in the proportion of NV- defects in 10 nm NDs. These results are invaluable for further understanding, control, and use of the unique properties of negatively charged NV defects in diamond.

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DO - 10.1103/PhysRevB.82.115449

M3 - Article

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JO - Physical Review B - Condensed Matter and Materials Physics

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ER -

Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds

Abstract

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