Synchrotron radiation and conventional x-ray source photoemission studies of γ-Al2O3 thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy

M. El Kazzi; C. Merckling; G. Grenet; G. Saint-Girons; M. Silly; F. Sirotti; G. Hollinger

doi:10.1557/proc-1155-c08-05

Synchrotron radiation and conventional x-ray source photoemission studies of γ-Al₂O₃ thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy

M. El Kazzi
, C. Merckling
, G. Grenet
, G. Saint-Girons
, M. Silly
, F. Sirotti
, G. Hollinger

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

High-resolution synchrotron radiation X-ray photoelectron spectroscopy (HRXPS) is used to study the chemical bonding at the Al₂O ₃/Si(001) and Al₂O₃/Si(111) interfaces. In both cases, the Si2p spectra recorded at 180 eV photon energy provides evidence a thin interfacial layer rich in Si-O bonding. On the other hand, conventional AlK_α X-ray source angular measurements clearly indicate that there are two in-plane orientations for Al₂O₃/Si(111) : [11-2]Al₂O₃(111)//[11-2]Si(111) and [-1-12] Al ₂O₃(111)//[11-2]Si(111) but four in-plane orientations for Al₂O₃/Si(001) : [11-2] Al₂O ₃(111)//[100]Si(001), [11-2]Al₂O₃(111)//[010] Si(001), [11-2]Al₂O₃(111)//[-100]Si(001), and [11-2]Al₂O₃(111)//[0-10]Si(001).

Original language	English
Title of host publication	CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications
Publisher	Materials Research Society
Pages	29-33
Number of pages	5
ISBN (Print)	9781605111285
DOIs	https://doi.org/10.1557/proc-1155-c08-05
Publication status	Published - 1 Jan 2009
Externally published	Yes
Event	2009 MRS Spring Meeting - San Francisco, CA, United States Duration: 13 Apr 2009 → 17 Apr 2009

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1155
ISSN (Print)	0272-9172

Conference

Conference	2009 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	13/04/09 → 17/04/09

Access to Document

10.1557/proc-1155-c08-05

Cite this

El Kazzi, M., Merckling, C., Grenet, G., Saint-Girons, G., Silly, M., Sirotti, F., & Hollinger, G. (2009). Synchrotron radiation and conventional x-ray source photoemission studies of γ-Al₂O₃ thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy. In CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications (pp. 29-33). (Materials Research Society Symposium Proceedings; Vol. 1155). Materials Research Society. https://doi.org/10.1557/proc-1155-c08-05

El Kazzi, M. ; Merckling, C. ; Grenet, G. et al. / Synchrotron radiation and conventional x-ray source photoemission studies of γ-Al₂O₃ thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy. CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. Materials Research Society, 2009. pp. 29-33 (Materials Research Society Symposium Proceedings).

@inproceedings{463a941c808641bc91035209f19d1a19,

title = "Synchrotron radiation and conventional x-ray source photoemission studies of γ-Al2O3 thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy",

abstract = "High-resolution synchrotron radiation X-ray photoelectron spectroscopy (HRXPS) is used to study the chemical bonding at the Al2O 3/Si(001) and Al2O3/Si(111) interfaces. In both cases, the Si2p spectra recorded at 180 eV photon energy provides evidence a thin interfacial layer rich in Si-O bonding. On the other hand, conventional AlKα X-ray source angular measurements clearly indicate that there are two in-plane orientations for Al2O3/Si(111) : [11-2]Al2O3(111)//[11-2]Si(111) and [-1-12] Al 2O3(111)//[11-2]Si(111) but four in-plane orientations for Al2O3/Si(001) : [11-2] Al2O 3(111)//[100]Si(001), [11-2]Al2O3(111)//[010] Si(001), [11-2]Al2O3(111)//[-100]Si(001), and [11-2]Al2O3(111)//[0-10]Si(001).",

author = "\{El Kazzi\}, M. and C. Merckling and G. Grenet and G. Saint-Girons and M. Silly and F. Sirotti and G. Hollinger",

year = "2009",

month = jan,

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doi = "10.1557/proc-1155-c08-05",

language = "English",

isbn = "9781605111285",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

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booktitle = "CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications",

note = "2009 MRS Spring Meeting ; Conference date: 13-04-2009 Through 17-04-2009",

}

El Kazzi, M, Merckling, C, Grenet, G, Saint-Girons, G, Silly, M, Sirotti, F & Hollinger, G 2009, Synchrotron radiation and conventional x-ray source photoemission studies of γ-Al₂O₃ thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy. in CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. Materials Research Society Symposium Proceedings, vol. 1155, Materials Research Society, pp. 29-33, 2009 MRS Spring Meeting, San Francisco, CA, United States, 13/04/09. https://doi.org/10.1557/proc-1155-c08-05

Synchrotron radiation and conventional x-ray source photoemission studies of γ-Al₂O₃ thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy. / El Kazzi, M.; Merckling, C.; Grenet, G. et al.
CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. Materials Research Society, 2009. p. 29-33 (Materials Research Society Symposium Proceedings; Vol. 1155).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Synchrotron radiation and conventional x-ray source photoemission studies of γ-Al2O3 thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy

AU - El Kazzi, M.

AU - Merckling, C.

AU - Grenet, G.

AU - Saint-Girons, G.

AU - Silly, M.

AU - Sirotti, F.

AU - Hollinger, G.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - High-resolution synchrotron radiation X-ray photoelectron spectroscopy (HRXPS) is used to study the chemical bonding at the Al2O 3/Si(001) and Al2O3/Si(111) interfaces. In both cases, the Si2p spectra recorded at 180 eV photon energy provides evidence a thin interfacial layer rich in Si-O bonding. On the other hand, conventional AlKα X-ray source angular measurements clearly indicate that there are two in-plane orientations for Al2O3/Si(111) : [11-2]Al2O3(111)//[11-2]Si(111) and [-1-12] Al 2O3(111)//[11-2]Si(111) but four in-plane orientations for Al2O3/Si(001) : [11-2] Al2O 3(111)//[100]Si(001), [11-2]Al2O3(111)//[010] Si(001), [11-2]Al2O3(111)//[-100]Si(001), and [11-2]Al2O3(111)//[0-10]Si(001).

AB - High-resolution synchrotron radiation X-ray photoelectron spectroscopy (HRXPS) is used to study the chemical bonding at the Al2O 3/Si(001) and Al2O3/Si(111) interfaces. In both cases, the Si2p spectra recorded at 180 eV photon energy provides evidence a thin interfacial layer rich in Si-O bonding. On the other hand, conventional AlKα X-ray source angular measurements clearly indicate that there are two in-plane orientations for Al2O3/Si(111) : [11-2]Al2O3(111)//[11-2]Si(111) and [-1-12] Al 2O3(111)//[11-2]Si(111) but four in-plane orientations for Al2O3/Si(001) : [11-2] Al2O 3(111)//[100]Si(001), [11-2]Al2O3(111)//[010] Si(001), [11-2]Al2O3(111)//[-100]Si(001), and [11-2]Al2O3(111)//[0-10]Si(001).

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U2 - 10.1557/proc-1155-c08-05

DO - 10.1557/proc-1155-c08-05

M3 - Conference contribution

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SN - 9781605111285

T3 - Materials Research Society Symposium Proceedings

SP - 29

EP - 33

BT - CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications

PB - Materials Research Society

T2 - 2009 MRS Spring Meeting

Y2 - 13 April 2009 through 17 April 2009

ER -

El Kazzi M, Merckling C, Grenet G, Saint-Girons G, Silly M, Sirotti F et al. Synchrotron radiation and conventional x-ray source photoemission studies of γ-Al₂O₃ thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy. In CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. Materials Research Society. 2009. p. 29-33. (Materials Research Society Symposium Proceedings). doi: 10.1557/proc-1155-c08-05