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Systematic investigation of the temperature behavior of InAs/InP quantum nanostructure passively mode-locked lasers

  • K. Klaime
  • , R. Piron
  • , F. Grillot
  • , M. Dontabactouny
  • , S. Loualiche
  • , A. Le Corre
  • , K. Yvind
  • Université Européenne de Bretagne
  • CNRS LTCI
  • Technical University of Denmark

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper aims to investigate the effects of the temperature on the mode-locking capability of two section InAs/InP quantum nanostructure (QN) passively mode locked lasers. Devices are made with multi-layers of self-assembled InAs QN either grown on InP(100) (5 quantum dashes (QDashes) layers) or on InP (311)B (6 quantum dots (QDs) layers). Using an analytical model, the mode-locking stability map is extracted for the two types of QN as a function of optical absorption, cavity length, current density and temperature. We believe that this study is of first importance since it reports for the first time a systematic investigation of the temperature-dependence on the mode-locking properties of InAs/InP QN devices. Beside, a rigorous comparison between QDashes and QDs temperature dependence is proposed through a proper analysis of the mode-locking stability maps. Experimental results also show that under some specific conditions the mode-locking operation can be temperature independent.

Original languageEnglish
Title of host publicationQuantum Dots and Nanostructures
Subtitle of host publicationSynthesis, Characterization, and Modeling X
DOIs
Publication statusPublished - 3 Jun 2013
Externally publishedYes
EventQuantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X - San Francisco, CA, United States
Duration: 4 Feb 20136 Feb 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8634
ISSN (Print)0277-786X

Conference

ConferenceQuantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X
Country/TerritoryUnited States
CitySan Francisco, CA
Period4/02/136/02/13

Keywords

  • Mode-locked laser
  • Quantum dashes
  • Quantum dots
  • Semiconductor laser

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