Abstract
We have measured the photoinduced infrared absorption of hydrogenated amorphous silicon a-Si:H and silicon-carbon alloys (formula presented) using the sensitive technique of photomodulated infrared spectroscopy. The observed spectra are quantitatively accounted for by a model, which allows one to determine the width (energy spreading) of the conduction and valence band tail states separately.
| Original language | English |
|---|---|
| Pages (from-to) | 1-6 |
| Number of pages | 6 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 66 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 1 Jan 2002 |