Temperature dependence of Henry factor of Undoped and p-doped InAs/GaAs Quantum-Dot Lasers emitting at 1.3 μm

D. Y. Cong; A. Martinez; K. Merghem; A. Ramdane; J. G. Provost; M. Fischer; I. Krestnikov; A. Kovsh

doi:10.1049/ic:20070315

Temperature dependence of Henry factor of Undoped and p-doped InAs/GaAs Quantum-Dot Lasers emitting at 1.3 μm

D. Y. Cong, A. Martinez, K. Merghem, A. Ramdane, J. G. Provost, M. Fischer, I. Krestnikov, A. Kovsh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The temperature dependence of Henry factor α_H of undoped and p-type doped InAs/GaAs QD lasers is reported for the 20-80′ range. It is shown that α_H of p-type doped devices is temperature insensitive.

Original language	English
Title of host publication	2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9783800730421
DOIs	https://doi.org/10.1049/ic:20070315
Publication status	Published - 1 Jan 2007
Externally published	Yes
Event	2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007 - Berlin, Germany Duration: 16 Sept 2007 → 20 Sept 2007

Publication series

Name	2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007

Conference

Conference	2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007
Country/Territory	Germany
City	Berlin
Period	16/09/07 → 20/09/07

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10.1049/ic:20070315

Cite this

Cong, D. Y., Martinez, A., Merghem, K., Ramdane, A., Provost, J. G., Fischer, M., Krestnikov, I., & Kovsh, A. (2007). Temperature dependence of Henry factor of Undoped and p-doped InAs/GaAs Quantum-Dot Lasers emitting at 1.3 μm. In 2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007 Article 5758532 (2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1049/ic:20070315

Cong, D. Y. ; Martinez, A. ; Merghem, K. et al. / Temperature dependence of Henry factor of Undoped and p-doped InAs/GaAs Quantum-Dot Lasers emitting at 1.3 μm. 2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007. Institute of Electrical and Electronics Engineers Inc., 2007. (2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007).

@inproceedings{4f3be5e642f94d98a607681edb8f6869,

title = "Temperature dependence of Henry factor of Undoped and p-doped InAs/GaAs Quantum-Dot Lasers emitting at 1.3 μm",

abstract = "The temperature dependence of Henry factor αH of undoped and p-type doped InAs/GaAs QD lasers is reported for the 20-80′ range. It is shown that αH of p-type doped devices is temperature insensitive.",

author = "Cong, \{D. Y.\} and A. Martinez and K. Merghem and A. Ramdane and Provost, \{J. G.\} and M. Fischer and I. Krestnikov and A. Kovsh",

year = "2007",

month = jan,

day = "1",

doi = "10.1049/ic:20070315",

language = "English",

series = "2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007",

note = "2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007 ; Conference date: 16-09-2007 Through 20-09-2007",

}

Cong, DY, Martinez, A, Merghem, K, Ramdane, A, Provost, JG, Fischer, M, Krestnikov, I & Kovsh, A 2007, Temperature dependence of Henry factor of Undoped and p-doped InAs/GaAs Quantum-Dot Lasers emitting at 1.3 μm. in 2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007., 5758532, 2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007, Institute of Electrical and Electronics Engineers Inc., 2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007, Berlin, Germany, 16/09/07. https://doi.org/10.1049/ic:20070315

Temperature dependence of Henry factor of Undoped and p-doped InAs/GaAs Quantum-Dot Lasers emitting at 1.3 μm. / Cong, D. Y.; Martinez, A.; Merghem, K. et al.
2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007. Institute of Electrical and Electronics Engineers Inc., 2007. 5758532 (2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Temperature dependence of Henry factor of Undoped and p-doped InAs/GaAs Quantum-Dot Lasers emitting at 1.3 μm

AU - Cong, D. Y.

AU - Martinez, A.

AU - Merghem, K.

AU - Ramdane, A.

AU - Provost, J. G.

AU - Fischer, M.

AU - Krestnikov, I.

AU - Kovsh, A.

PY - 2007/1/1

Y1 - 2007/1/1

N2 - The temperature dependence of Henry factor αH of undoped and p-type doped InAs/GaAs QD lasers is reported for the 20-80′ range. It is shown that αH of p-type doped devices is temperature insensitive.

AB - The temperature dependence of Henry factor αH of undoped and p-type doped InAs/GaAs QD lasers is reported for the 20-80′ range. It is shown that αH of p-type doped devices is temperature insensitive.

U2 - 10.1049/ic:20070315

DO - 10.1049/ic:20070315

M3 - Conference contribution

AN - SCOPUS:84931069693

T3 - 2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007

BT - 2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007

Y2 - 16 September 2007 through 20 September 2007

ER -

Cong DY, Martinez A, Merghem K, Ramdane A, Provost JG, Fischer M et al. Temperature dependence of Henry factor of Undoped and p-doped InAs/GaAs Quantum-Dot Lasers emitting at 1.3 μm. In 2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007. Institute of Electrical and Electronics Engineers Inc. 2007. 5758532. (2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007). doi: 10.1049/ic:20070315

Temperature dependence of Henry factor of Undoped and p-doped InAs/GaAs Quantum-Dot Lasers emitting at 1.3 μm

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