Temperature effect during atomic layer deposition of zinc oxysulfide -Zn(O,S) buffer layers on Cu(In,Ga)(S,Se)2 synthesized by co-evaporation and electro-deposition techniques

C. Bugot; C. Broussillou; A. Sorba; L. Parissi; N. Schneider; D. Lincot; F. Donsanti

doi:10.1109/PVSC.2015.7356413

Temperature effect during atomic layer deposition of zinc oxysulfide -Zn(O,S) buffer layers on Cu(In,Ga)(S,Se)2 synthesized by co-evaporation and electro-deposition techniques

C. Bugot
, C. Broussillou
, A. Sorba
, L. Parissi
, N. Schneider
, D. Lincot
, F. Donsanti

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, we investigate the performances of Cu(In,Ga)(S,Se)2/Zn(O,S) devices varying both the absorber and the deposition temperature of the atomic layer deposited Zn(O,S) buffer layer. For both types of devices, two ranges of Zn(O,S) deposition temperatures were found to improve significantly the opto-electronic parameters, due to either specific Zn(O,S) properties or interdiffusion mechanisms. With this approach, we demonstrated the existence of two distinct favorable band alignments at the CIGS/Zn(O,S) junction. This study also demonstrates the benefits of using Atomic layer Deposition to accurately control the Zn(O,S) properties and therefore avoid device annealing and i-ZnO replacement by (Zn,Mg)O window layer.

Original language	English
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7356413
Publication status	Published - 14 Dec 2015
Externally published	Yes
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015

Publication series

Name	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	14/06/15 → 19/06/15

Keywords

Atomic Layer Deposition
CIGS solar cells
GDOES
Zn(O,S)
buffer layer
deposition temperature
intermixing

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10.1109/PVSC.2015.7356413

Cite this

Bugot, C., Broussillou, C., Sorba, A., Parissi, L., Schneider, N., Lincot, D., & Donsanti, F. (2015). Temperature effect during atomic layer deposition of zinc oxysulfide -Zn(O,S) buffer layers on Cu(In,Ga)(S,Se)2 synthesized by co-evaporation and electro-deposition techniques. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 Article 7356413 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7356413

Bugot, C. ; Broussillou, C. ; Sorba, A. et al. / Temperature effect during atomic layer deposition of zinc oxysulfide -Zn(O,S) buffer layers on Cu(In,Ga)(S,Se)2 synthesized by co-evaporation and electro-deposition techniques. 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

@inproceedings{83dd8fcd5b044ef7a8231c82ba50727f,

title = "Temperature effect during atomic layer deposition of zinc oxysulfide -Zn(O,S) buffer layers on Cu(In,Ga)(S,Se)2 synthesized by co-evaporation and electro-deposition techniques",

abstract = "In this study, we investigate the performances of Cu(In,Ga)(S,Se)2/Zn(O,S) devices varying both the absorber and the deposition temperature of the atomic layer deposited Zn(O,S) buffer layer. For both types of devices, two ranges of Zn(O,S) deposition temperatures were found to improve significantly the opto-electronic parameters, due to either specific Zn(O,S) properties or interdiffusion mechanisms. With this approach, we demonstrated the existence of two distinct favorable band alignments at the CIGS/Zn(O,S) junction. This study also demonstrates the benefits of using Atomic layer Deposition to accurately control the Zn(O,S) properties and therefore avoid device annealing and i-ZnO replacement by (Zn,Mg)O window layer.",

keywords = "Atomic Layer Deposition, CIGS solar cells, GDOES, Zn(O,S), buffer layer, deposition temperature, intermixing",

author = "C. Bugot and C. Broussillou and A. Sorba and L. Parissi and N. Schneider and D. Lincot and F. Donsanti",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7356413",

language = "English",

series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

}

Bugot, C, Broussillou, C, Sorba, A, Parissi, L, Schneider, N, Lincot, D & Donsanti, F 2015, Temperature effect during atomic layer deposition of zinc oxysulfide -Zn(O,S) buffer layers on Cu(In,Ga)(S,Se)2 synthesized by co-evaporation and electro-deposition techniques. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7356413, 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 14/06/15. https://doi.org/10.1109/PVSC.2015.7356413

Temperature effect during atomic layer deposition of zinc oxysulfide -Zn(O,S) buffer layers on Cu(In,Ga)(S,Se)2 synthesized by co-evaporation and electro-deposition techniques. / Bugot, C.; Broussillou, C.; Sorba, A. et al.
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7356413 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Temperature effect during atomic layer deposition of zinc oxysulfide -Zn(O,S) buffer layers on Cu(In,Ga)(S,Se)2 synthesized by co-evaporation and electro-deposition techniques

AU - Bugot, C.

AU - Broussillou, C.

AU - Sorba, A.

AU - Parissi, L.

AU - Schneider, N.

AU - Lincot, D.

AU - Donsanti, F.

PY - 2015/12/14

Y1 - 2015/12/14

N2 - In this study, we investigate the performances of Cu(In,Ga)(S,Se)2/Zn(O,S) devices varying both the absorber and the deposition temperature of the atomic layer deposited Zn(O,S) buffer layer. For both types of devices, two ranges of Zn(O,S) deposition temperatures were found to improve significantly the opto-electronic parameters, due to either specific Zn(O,S) properties or interdiffusion mechanisms. With this approach, we demonstrated the existence of two distinct favorable band alignments at the CIGS/Zn(O,S) junction. This study also demonstrates the benefits of using Atomic layer Deposition to accurately control the Zn(O,S) properties and therefore avoid device annealing and i-ZnO replacement by (Zn,Mg)O window layer.

AB - In this study, we investigate the performances of Cu(In,Ga)(S,Se)2/Zn(O,S) devices varying both the absorber and the deposition temperature of the atomic layer deposited Zn(O,S) buffer layer. For both types of devices, two ranges of Zn(O,S) deposition temperatures were found to improve significantly the opto-electronic parameters, due to either specific Zn(O,S) properties or interdiffusion mechanisms. With this approach, we demonstrated the existence of two distinct favorable band alignments at the CIGS/Zn(O,S) junction. This study also demonstrates the benefits of using Atomic layer Deposition to accurately control the Zn(O,S) properties and therefore avoid device annealing and i-ZnO replacement by (Zn,Mg)O window layer.

KW - Atomic Layer Deposition

KW - CIGS solar cells

KW - GDOES

KW - Zn(O,S)

KW - buffer layer

KW - deposition temperature

KW - intermixing

U2 - 10.1109/PVSC.2015.7356413

DO - 10.1109/PVSC.2015.7356413

M3 - Conference contribution

AN - SCOPUS:84961576028

T3 - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Bugot C, Broussillou C, Sorba A, Parissi L, Schneider N, Lincot D et al. Temperature effect during atomic layer deposition of zinc oxysulfide -Zn(O,S) buffer layers on Cu(In,Ga)(S,Se)2 synthesized by co-evaporation and electro-deposition techniques. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7356413. (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). doi: 10.1109/PVSC.2015.7356413

Temperature effect during atomic layer deposition of zinc oxysulfide -Zn(O,S) buffer layers on Cu(In,Ga)(S,Se)2 synthesized by co-evaporation and electro-deposition techniques

Abstract

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Keywords

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