Temperature improvement of the optical and electrical properties of hydrogenated nanostructured silicon thin films

A. Hadjadj; A. Beorchia; P. Roca I Cabarrocas; L. Boufendi

doi:10.1016/S0040-6090(01)01566-8

Temperature improvement of the optical and electrical properties of hydrogenated nanostructured silicon thin films

A. Hadjadj, A. Beorchia, P. Roca I Cabarrocas, L. Boufendi

Research output: Contribution to journal › Conference article › peer-review

Abstract

Hydrogenated nanostructured silicon thin films have been deposited in a pulsed argon-silane glow discharge. The effects of both plasma duration and deposition temperature on the structural, optical and electrical film properties have been investigated. When deposited at room temperature, an increase in plasma duration from 0.1 to 1 s leads to rougher and more porous films with deteriorated optical and transport properties. When the plasma duration is chosen just before the α→γ′ plasma transition, the increase in the deposition temperature results in a spectacular improvement of the film properties above 50°C.

Original language	English
Pages (from-to)	139-143
Number of pages	5
Journal	Thin Solid Films
Volume	403-404
DOIs	https://doi.org/10.1016/S0040-6090(01)01566-8
Publication status	Published - 1 Feb 2002
Event	Proceedings of Symposium P on Thin Film Materials for Photovolt E-MRS - Strasbourg, France Duration: 5 Jun 2001 → 8 Jun 2001

Keywords

Electrical properties
Nanoparticles
Nanostructured silicon
Optical properties

Access to Document

10.1016/S0040-6090(01)01566-8

Cite this

@article{2830de1bff7c4a5eaaee3bb9340ea172,

title = "Temperature improvement of the optical and electrical properties of hydrogenated nanostructured silicon thin films",

abstract = "Hydrogenated nanostructured silicon thin films have been deposited in a pulsed argon-silane glow discharge. The effects of both plasma duration and deposition temperature on the structural, optical and electrical film properties have been investigated. When deposited at room temperature, an increase in plasma duration from 0.1 to 1 s leads to rougher and more porous films with deteriorated optical and transport properties. When the plasma duration is chosen just before the α→γ′ plasma transition, the increase in the deposition temperature results in a spectacular improvement of the film properties above 50°C.",

keywords = "Electrical properties, Nanoparticles, Nanostructured silicon, Optical properties",

author = "A. Hadjadj and A. Beorchia and \{Roca I Cabarrocas\}, P. and L. Boufendi",

year = "2002",

month = feb,

day = "1",

doi = "10.1016/S0040-6090(01)01566-8",

language = "English",

volume = "403-404",

pages = "139--143",

journal = "Thin Solid Films",

issn = "0040-6090",

note = "Proceedings of Symposium P on Thin Film Materials for Photovolt E-MRS ; Conference date: 05-06-2001 Through 08-06-2001",

}

TY - JOUR

T1 - Temperature improvement of the optical and electrical properties of hydrogenated nanostructured silicon thin films

AU - Hadjadj, A.

AU - Beorchia, A.

AU - Roca I Cabarrocas, P.

AU - Boufendi, L.

PY - 2002/2/1

Y1 - 2002/2/1

N2 - Hydrogenated nanostructured silicon thin films have been deposited in a pulsed argon-silane glow discharge. The effects of both plasma duration and deposition temperature on the structural, optical and electrical film properties have been investigated. When deposited at room temperature, an increase in plasma duration from 0.1 to 1 s leads to rougher and more porous films with deteriorated optical and transport properties. When the plasma duration is chosen just before the α→γ′ plasma transition, the increase in the deposition temperature results in a spectacular improvement of the film properties above 50°C.

AB - Hydrogenated nanostructured silicon thin films have been deposited in a pulsed argon-silane glow discharge. The effects of both plasma duration and deposition temperature on the structural, optical and electrical film properties have been investigated. When deposited at room temperature, an increase in plasma duration from 0.1 to 1 s leads to rougher and more porous films with deteriorated optical and transport properties. When the plasma duration is chosen just before the α→γ′ plasma transition, the increase in the deposition temperature results in a spectacular improvement of the film properties above 50°C.

KW - Electrical properties

KW - Nanoparticles

KW - Nanostructured silicon

KW - Optical properties

U2 - 10.1016/S0040-6090(01)01566-8

DO - 10.1016/S0040-6090(01)01566-8

M3 - Conference article

AN - SCOPUS:0036467820

SN - 0040-6090

VL - 403-404

SP - 139

EP - 143

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of Symposium P on Thin Film Materials for Photovolt E-MRS

Y2 - 5 June 2001 through 8 June 2001

ER -

Temperature improvement of the optical and electrical properties of hydrogenated nanostructured silicon thin films

Abstract

Keywords

Access to Document

Fingerprint

Cite this