Temperature insensitive linewidth enhancement factor of p -type doped InAsGaAs quantum-dot lasers emitting at 1.3 μm

D. Y. Cong; A. Martinez; K. Merghem; A. Ramdane; J. G. Provost; M. Fischer; I. Krestnikov; A. Kovsh

doi:10.1063/1.2929384

Temperature insensitive linewidth enhancement factor of p -type doped InAsGaAs quantum-dot lasers emitting at 1.3 μm

D. Y. Cong
, A. Martinez
, K. Merghem
, A. Ramdane
, J. G. Provost
, M. Fischer
, I. Krestnikov
, A. Kovsh

Centre national de la recherche scientifique
Alcatel Research and Innovation
Nanoplus Nanosystems and Technologies GmbH
Innolume GmbH

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The temperature dependence of microwave properties-relaxation frequency and Henry factor-of undoped and p -type doped ten InAsGaAs quantum-dot layer lasers is reported in the 20-80 °C range. It is shown that the linewidth enhancement factor of the p -type doped devices is temperature insensitive while that of the undoped lasers shows a strong dependence for temperatures above 40 °C.

Original language	English
Article number	191109
Journal	Applied Physics Letters
Volume	92
Issue number	19
DOIs	https://doi.org/10.1063/1.2929384
Publication status	Published - 27 May 2008

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10.1063/1.2929384

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title = "Temperature insensitive linewidth enhancement factor of p -type doped InAsGaAs quantum-dot lasers emitting at 1.3 μm",

abstract = "The temperature dependence of microwave properties-relaxation frequency and Henry factor-of undoped and p -type doped ten InAsGaAs quantum-dot layer lasers is reported in the 20-80 °C range. It is shown that the linewidth enhancement factor of the p -type doped devices is temperature insensitive while that of the undoped lasers shows a strong dependence for temperatures above 40 °C.",

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T1 - Temperature insensitive linewidth enhancement factor of p -type doped InAsGaAs quantum-dot lasers emitting at 1.3 μm

AU - Cong, D. Y.

AU - Martinez, A.

AU - Merghem, K.

AU - Ramdane, A.

AU - Provost, J. G.

AU - Fischer, M.

AU - Krestnikov, I.

AU - Kovsh, A.

PY - 2008/5/27

Y1 - 2008/5/27

N2 - The temperature dependence of microwave properties-relaxation frequency and Henry factor-of undoped and p -type doped ten InAsGaAs quantum-dot layer lasers is reported in the 20-80 °C range. It is shown that the linewidth enhancement factor of the p -type doped devices is temperature insensitive while that of the undoped lasers shows a strong dependence for temperatures above 40 °C.

AB - The temperature dependence of microwave properties-relaxation frequency and Henry factor-of undoped and p -type doped ten InAsGaAs quantum-dot layer lasers is reported in the 20-80 °C range. It is shown that the linewidth enhancement factor of the p -type doped devices is temperature insensitive while that of the undoped lasers shows a strong dependence for temperatures above 40 °C.

U2 - 10.1063/1.2929384

DO - 10.1063/1.2929384

M3 - Article

AN - SCOPUS:44049095153

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 191109

ER -

Temperature insensitive linewidth enhancement factor of p -type doped InAsGaAs quantum-dot lasers emitting at 1.3 μm

Abstract

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