Tensile-strained germanium microdisks using Si3N4 stressors

M. El Kurdi; A. Ghrib; M. De Kersauson; M. Prost; S. Sauvage; X. Checoury; G. Beaudoin; I. Sagnes; G. Ndong; M. Chaigneau; R. Ossikovski; P. Boucaud

doi:10.1109/Group4.2013.6644443

Tensile-strained germanium microdisks using Si₃N₄ stressors

M. El Kurdi, A. Ghrib, M. De Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Ndong, M. Chaigneau, R. Ossikovski, P. Boucaud

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A strong tensile strain (1% biaxial) is applied to germanium microdisks using silicon nitride stressors. Both Fabry-Perot and whispering gallery modes are observed with quality factors up to 1350 limited by free carrier absorption.

Original language	English
Title of host publication	2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013
Pages	95-96
Number of pages	2
DOIs	https://doi.org/10.1109/Group4.2013.6644443
Publication status	Published - 31 Dec 2013
Event	2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013 - Seoul, Korea, Republic of Duration: 28 Aug 2013 → 30 Aug 2013

Publication series

Name	IEEE International Conference on Group IV Photonics GFP
ISSN (Print)	1949-2081

Conference

Conference	2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013
Country/Territory	Korea, Republic of
City	Seoul
Period	28/08/13 → 30/08/13

Access to Document

10.1109/Group4.2013.6644443

Cite this

El Kurdi, M., Ghrib, A., De Kersauson, M., Prost, M., Sauvage, S., Checoury, X., Beaudoin, G., Sagnes, I., Ndong, G., Chaigneau, M., Ossikovski, R., & Boucaud, P. (2013). Tensile-strained germanium microdisks using Si₃N₄ stressors. In 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013 (pp. 95-96). Article 6644443 (IEEE International Conference on Group IV Photonics GFP). https://doi.org/10.1109/Group4.2013.6644443

@inproceedings{18f1a0e571754857a3315bf8e970275b,

title = "Tensile-strained germanium microdisks using Si3N4 stressors",

abstract = "A strong tensile strain (1\% biaxial) is applied to germanium microdisks using silicon nitride stressors. Both Fabry-Perot and whispering gallery modes are observed with quality factors up to 1350 limited by free carrier absorption.",

author = "\{El Kurdi\}, M. and A. Ghrib and \{De Kersauson\}, M. and M. Prost and S. Sauvage and X. Checoury and G. Beaudoin and I. Sagnes and G. Ndong and M. Chaigneau and R. Ossikovski and P. Boucaud",

year = "2013",

month = dec,

day = "31",

doi = "10.1109/Group4.2013.6644443",

language = "English",

isbn = "9781467358040",

series = "IEEE International Conference on Group IV Photonics GFP",

pages = "95--96",

booktitle = "2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013",

note = "2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013 ; Conference date: 28-08-2013 Through 30-08-2013",

}

El Kurdi, M, Ghrib, A, De Kersauson, M, Prost, M, Sauvage, S, Checoury, X, Beaudoin, G, Sagnes, I, Ndong, G, Chaigneau, M, Ossikovski, R & Boucaud, P 2013, Tensile-strained germanium microdisks using Si₃N₄ stressors. in 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013., 6644443, IEEE International Conference on Group IV Photonics GFP, pp. 95-96, 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013, Seoul, Korea, Republic of, 28/08/13. https://doi.org/10.1109/Group4.2013.6644443

Tensile-strained germanium microdisks using Si₃N₄ stressors. / El Kurdi, M.; Ghrib, A.; De Kersauson, M. et al.
2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013. 2013. p. 95-96 6644443 (IEEE International Conference on Group IV Photonics GFP).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Sauvage, S.

AU - Checoury, X.

AU - Beaudoin, G.

AU - Sagnes, I.

AU - Ndong, G.

AU - Chaigneau, M.

AU - Ossikovski, R.

AU - Boucaud, P.

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