The above-threshold linewidth enhancement factor of silicon-based quantum dot lasers

Shihao Ding; Bozhang Dong; Heming Huang; John E. Bowers; Frederic Grillot

doi:10.1109/GFP51802.2021.9673822

The above-threshold linewidth enhancement factor of silicon-based quantum dot lasers

Shihao Ding
, Bozhang Dong
, Heming Huang
, John E. Bowers
, Frederic Grillot

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The spectral dependence of the linewidth enhancement factor of silicon based InAs/GaAs quantum dot lasers is investigated above the threshold by using a phase modulation method. Low values of linewidth enhancement factor measured at twice the threshold are reported. Such results confirm the high quality of the quantum dot material.

Original language	English
Title of host publication	2021 IEEE 17th International Conference on Group IV Photonics, GFP 2021 - Proceedings
Publisher	IEEE Computer Society
ISBN (Electronic)	9781665422246
DOIs	https://doi.org/10.1109/GFP51802.2021.9673822
Publication status	Published - 1 Jan 2021
Event	17th IEEE International Conference on Group IV Photonics, GFP 2021 - Virtual, Online, Spain Duration: 7 Dec 2021 → 10 Dec 2021

Publication series

Name	IEEE International Conference on Group IV Photonics GFP
Volume	2021-December
ISSN (Print)	1949-2081

Conference

Conference	17th IEEE International Conference on Group IV Photonics, GFP 2021
Country/Territory	Spain
City	Virtual, Online
Period	7/12/21 → 10/12/21

Access to Document

10.1109/GFP51802.2021.9673822

Cite this

Ding, S., Dong, B., Huang, H., Bowers, J. E., & Grillot, F. (2021). The above-threshold linewidth enhancement factor of silicon-based quantum dot lasers. In 2021 IEEE 17th International Conference on Group IV Photonics, GFP 2021 - Proceedings (IEEE International Conference on Group IV Photonics GFP; Vol. 2021-December). IEEE Computer Society. https://doi.org/10.1109/GFP51802.2021.9673822

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title = "The above-threshold linewidth enhancement factor of silicon-based quantum dot lasers",

abstract = "The spectral dependence of the linewidth enhancement factor of silicon based InAs/GaAs quantum dot lasers is investigated above the threshold by using a phase modulation method. Low values of linewidth enhancement factor measured at twice the threshold are reported. Such results confirm the high quality of the quantum dot material.",

author = "Shihao Ding and Bozhang Dong and Heming Huang and Bowers, \{John E.\} and Frederic Grillot",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 17th IEEE International Conference on Group IV Photonics, GFP 2021 ; Conference date: 07-12-2021 Through 10-12-2021",

year = "2021",

month = jan,

day = "1",

doi = "10.1109/GFP51802.2021.9673822",

language = "English",

series = "IEEE International Conference on Group IV Photonics GFP",

publisher = "IEEE Computer Society",

booktitle = "2021 IEEE 17th International Conference on Group IV Photonics, GFP 2021 - Proceedings",

}

Ding, S, Dong, B, Huang, H, Bowers, JE & Grillot, F 2021, The above-threshold linewidth enhancement factor of silicon-based quantum dot lasers. in 2021 IEEE 17th International Conference on Group IV Photonics, GFP 2021 - Proceedings. IEEE International Conference on Group IV Photonics GFP, vol. 2021-December, IEEE Computer Society, 17th IEEE International Conference on Group IV Photonics, GFP 2021, Virtual, Online, Spain, 7/12/21. https://doi.org/10.1109/GFP51802.2021.9673822

The above-threshold linewidth enhancement factor of silicon-based quantum dot lasers. / Ding, Shihao; Dong, Bozhang; Huang, Heming et al.
2021 IEEE 17th International Conference on Group IV Photonics, GFP 2021 - Proceedings. IEEE Computer Society, 2021. (IEEE International Conference on Group IV Photonics GFP; Vol. 2021-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The above-threshold linewidth enhancement factor of silicon-based quantum dot lasers

AU - Ding, Shihao

AU - Dong, Bozhang

AU - Huang, Heming

AU - Bowers, John E.

AU - Grillot, Frederic

PY - 2021/1/1

Y1 - 2021/1/1

N2 - The spectral dependence of the linewidth enhancement factor of silicon based InAs/GaAs quantum dot lasers is investigated above the threshold by using a phase modulation method. Low values of linewidth enhancement factor measured at twice the threshold are reported. Such results confirm the high quality of the quantum dot material.

AB - The spectral dependence of the linewidth enhancement factor of silicon based InAs/GaAs quantum dot lasers is investigated above the threshold by using a phase modulation method. Low values of linewidth enhancement factor measured at twice the threshold are reported. Such results confirm the high quality of the quantum dot material.

UR - https://www.scopus.com/pages/publications/85124699865

U2 - 10.1109/GFP51802.2021.9673822

DO - 10.1109/GFP51802.2021.9673822

M3 - Conference contribution

AN - SCOPUS:85124699865

T3 - IEEE International Conference on Group IV Photonics GFP

BT - 2021 IEEE 17th International Conference on Group IV Photonics, GFP 2021 - Proceedings

PB - IEEE Computer Society

T2 - 17th IEEE International Conference on Group IV Photonics, GFP 2021

Y2 - 7 December 2021 through 10 December 2021

ER -

The above-threshold linewidth enhancement factor of silicon-based quantum dot lasers

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