The kinetics of light-induced defect creation in hydrogenated polymorphous silicon - Stretched exponential relaxation

The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in hydrogenated polymorphous silicon. It is fitted to a stretched exponential function with two parameters β and τ. The experimental results on the values of β and τ, as functions of saturated dangling bond density N_ss are compared with those calculated on the basis of our model for light-induced defect creation in a-Si:H. This comparison as well as the experimental result on saturated dangling bond density as a function of generation rate of free carriers is consistent with our model.