Abstract
CIGS [Cu(In,Ga)Se2] solar cells have demonstrated both very high performance and exceptional insensitivity to radiation damage or impurity. Facts related to stability of CIGS cells are briefly reviewed before potential underlying reasons for this exceptional behavior are exposed. The role of the interactions between point defects is stressed and a mechanism by which the association of point defects may lead to healing of deep centers is proposed.
| Original language | English |
|---|---|
| Pages (from-to) | 405-409 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 403-404 |
| DOIs | |
| Publication status | Published - 1 Feb 2002 |
| Externally published | Yes |
| Event | Proceedings of Symposium P on Thin Film Materials for Photovolt E-MRS - Strasbourg, France Duration: 5 Jun 2001 → 8 Jun 2001 |
Keywords
- Cu(In,Ga)Se
- Defect chemistry
- Defect physics
- Solar cells
- Stability
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