The role of hydrogen in the formation of microcrystalline silicon

A. Fontcuberta i Morral; J. Bertomeu; P. Roca i Cabarrocas

doi:10.1016/S0921-5107(99)00324-4

The role of hydrogen in the formation of microcrystalline silicon

A. Fontcuberta i Morral, J. Bertomeu, P. Roca i Cabarrocas

Research output: Contribution to journal › Conference article › peer-review

Abstract

The growth mechanisms of microcrystalline silicon thin films at low temperatures (100-250°C) by plasma CVD are still a matter of debate. We have shown that ue-Si:H formation proceeds through four phases (incubation, nucleation, growth and steady state) and that hydrogen plays a key role in this process, particularly during the incubation phase in which hydrogen modifies the amorphous silicon network and forms a highly porous phase where nucleation takes place. In this study we combine in-situ ellipsometry and dark conductivity measurements with ex-situ high resolution transmission electron microscopy to improve our understanding of microcrystalline silicon formation.

Original language	English
Pages (from-to)	559-563
Number of pages	5
Journal	Materials Science and Engineering: B
Volume	69-70
DOIs	https://doi.org/10.1016/S0921-5107(99)00324-4
Publication status	Published - 19 Jan 2000
Externally published	Yes
Event	The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors - Strasbourg, France Duration: 1 Jun 1999 → 4 Jun 1999

Keywords

Hydrogen
Low temperatures
Microcrystalline silicon films

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10.1016/S0921-5107(99)00324-4

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title = "The role of hydrogen in the formation of microcrystalline silicon",

abstract = "The growth mechanisms of microcrystalline silicon thin films at low temperatures (100-250°C) by plasma CVD are still a matter of debate. We have shown that ue-Si:H formation proceeds through four phases (incubation, nucleation, growth and steady state) and that hydrogen plays a key role in this process, particularly during the incubation phase in which hydrogen modifies the amorphous silicon network and forms a highly porous phase where nucleation takes place. In this study we combine in-situ ellipsometry and dark conductivity measurements with ex-situ high resolution transmission electron microscopy to improve our understanding of microcrystalline silicon formation.",

keywords = "Hydrogen, Low temperatures, Microcrystalline silicon films",

author = "\{Fontcuberta i Morral\}, A. and J. Bertomeu and \{Roca i Cabarrocas\}, P.",

year = "2000",

month = jan,

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doi = "10.1016/S0921-5107(99)00324-4",

language = "English",

volume = "69-70",

pages = "559--563",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

note = "The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors ; Conference date: 01-06-1999 Through 04-06-1999",

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TY - JOUR

T1 - The role of hydrogen in the formation of microcrystalline silicon

AU - Fontcuberta i Morral, A.

AU - Bertomeu, J.

AU - Roca i Cabarrocas, P.

PY - 2000/1/19

Y1 - 2000/1/19

N2 - The growth mechanisms of microcrystalline silicon thin films at low temperatures (100-250°C) by plasma CVD are still a matter of debate. We have shown that ue-Si:H formation proceeds through four phases (incubation, nucleation, growth and steady state) and that hydrogen plays a key role in this process, particularly during the incubation phase in which hydrogen modifies the amorphous silicon network and forms a highly porous phase where nucleation takes place. In this study we combine in-situ ellipsometry and dark conductivity measurements with ex-situ high resolution transmission electron microscopy to improve our understanding of microcrystalline silicon formation.

AB - The growth mechanisms of microcrystalline silicon thin films at low temperatures (100-250°C) by plasma CVD are still a matter of debate. We have shown that ue-Si:H formation proceeds through four phases (incubation, nucleation, growth and steady state) and that hydrogen plays a key role in this process, particularly during the incubation phase in which hydrogen modifies the amorphous silicon network and forms a highly porous phase where nucleation takes place. In this study we combine in-situ ellipsometry and dark conductivity measurements with ex-situ high resolution transmission electron microscopy to improve our understanding of microcrystalline silicon formation.

KW - Hydrogen

KW - Low temperatures

KW - Microcrystalline silicon films

U2 - 10.1016/S0921-5107(99)00324-4

DO - 10.1016/S0921-5107(99)00324-4

M3 - Conference article

AN - SCOPUS:0033907222

SN - 0921-5107

VL - 69-70

SP - 559

EP - 563

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

T2 - The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors

Y2 - 1 June 1999 through 4 June 1999

ER -

The role of hydrogen in the formation of microcrystalline silicon

Abstract

Keywords

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