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The Schottky barrier transistor in emerging electronic devices

  • Mike Schwarz
  • , Tom D. Vethaak
  • , Vincent Derycke
  • , Anaïs Francheteau
  • , Benjamin Iniguez
  • , Satender Kataria
  • , Alexander Kloes
  • , Francois Lefloch
  • , Max Lemme
  • , John P. Snyder
  • , Walter M. Weber
  • , Laurie E. Calvet
  • Technische Hochschule Mittelhessen
  • Chalmers University of Technology
  • Université Paris-Saclay
  • LTHE (UMR 5564 CNRS/IRD/Université de Grenoble)
  • Universitat Rovira i Virgili
  • RWTH Aachen University
  • LLC
  • Vienna University of Technology

Research output: Contribution to journalReview articlepeer-review

Abstract

This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics. For high performance computing, the SB typically needs to be minimized to achieve optimal performance and we explore the methods adopted in carbon nanotube technology and two-dimensional electronics. On the contrary for ubiquitous electronics, the SB can be used advantageously in source-gated transistors and reconfigurable field-effect transistors (FETs) for sensors, neuromorphic hardware and security applications. Similarly, judicious use of an SB can be an asset for applications involving Josephson junction FETs.

Original languageEnglish
Article number352002
JournalNanotechnology
Volume34
Issue number35
DOIs
Publication statusPublished - 27 Aug 2023

Keywords

  • 1D materials
  • 2D materials
  • Josephson junctions
  • Schottky barriers
  • field effect transistors
  • source-gated transistors
  • thin film transistors

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