The Zn(S,O,OH)/ZnMgO buffer in thin-film Cu(In,Ga)(Se,S)2-based solar cells part II: Magnetron sputtering of the ZnMgO buffer layer for in-line co-evaporated Cu(In,Ga)Se2 solar cells

D. Hariskos; B. Fuchs; R. Menner; N. Naghavi; C. Hubert; D. Lincot; M. Powalla

doi:10.1002/pip.897

The Zn(S,O,OH)/ZnMgO buffer in thin-film Cu(In,Ga)(Se,S)₂-based solar cells part II: Magnetron sputtering of the ZnMgO buffer layer for in-line co-evaporated Cu(In,Ga)Se₂ solar cells

D. Hariskos
, B. Fuchs
, R. Menner
, N. Naghavi
, C. Hubert
, D. Lincot
, M. Powalla

Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg
Centre national de la recherche scientifique

Research output: Contribution to journal › Article › peer-review

117 Citations (Scopus)

Abstract

A ZnS/Zn_1-xMg_xO buffer combination was developed to replace the CdS/i-ZnO layers in in-line co-evaporated Cu(In,Ga)Se ₂(CIGS)-based solar cells. The ZnS was deposited by the chemical bath deposition (CBD) technique and the Zn_1-xMg_xO layer by RF magnetron sputtering from ceramic targets. The [Mg]/([Mg] + [Zn]) ratio in the target was varied between x = 0.0 and 0.4. The composition, the crystal structure, and the optical properties of the resulting layers were analyzed. Small laboratory cells and 10×10 cm² modules were realized with high reproducibility and enhanced stability. The transmission is improved in the wavelength region between 330 and 550 nm for the ZnS/Zn_1-xMg _xO layers. Therefore, a large gain in the short-circuit current density up to 12% was obtained, which resulted in higher conversion efficiencies up to 9% relative as compared to cells with the CdS/i-ZnO buffer system. Peak efficiencies of 18% with small laboratory cells and 15-2% with 10 × 10 cm² mini-modules were demonstrated.

Original language	English
Pages (from-to)	479-488
Number of pages	10
Journal	Progress in Photovoltaics: Research and Applications
Volume	17
Issue number	7
DOIs	https://doi.org/10.1002/pip.897
Publication status	Published - 1 Nov 2009

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SDG 7 Affordable and Clean Energy

Keywords

Buffer layer
CIGS
Chemical bath deposition
In-line co-evaporation
Sputtering

Access to Document

10.1002/pip.897

Cite this

Hariskos, D., Fuchs, B., Menner, R., Naghavi, N., Hubert, C., Lincot, D., & Powalla, M. (2009). The Zn(S,O,OH)/ZnMgO buffer in thin-film Cu(In,Ga)(Se,S)₂-based solar cells part II: Magnetron sputtering of the ZnMgO buffer layer for in-line co-evaporated Cu(In,Ga)Se₂ solar cells. Progress in Photovoltaics: Research and Applications, 17(7), 479-488. https://doi.org/10.1002/pip.897

@article{8c297f25c8db4854ba7259a0e64033fb,

title = "The Zn(S,O,OH)/ZnMgO buffer in thin-film Cu(In,Ga)(Se,S)2-based solar cells part II: Magnetron sputtering of the ZnMgO buffer layer for in-line co-evaporated Cu(In,Ga)Se2 solar cells",

abstract = "A ZnS/Zn1-xMgxO buffer combination was developed to replace the CdS/i-ZnO layers in in-line co-evaporated Cu(In,Ga)Se 2(CIGS)-based solar cells. The ZnS was deposited by the chemical bath deposition (CBD) technique and the Zn1-xMgxO layer by RF magnetron sputtering from ceramic targets. The [Mg]/([Mg] + [Zn]) ratio in the target was varied between x = 0.0 and 0.4. The composition, the crystal structure, and the optical properties of the resulting layers were analyzed. Small laboratory cells and 10{\texttimes}10 cm2 modules were realized with high reproducibility and enhanced stability. The transmission is improved in the wavelength region between 330 and 550 nm for the ZnS/Zn1-xMg xO layers. Therefore, a large gain in the short-circuit current density up to 12\% was obtained, which resulted in higher conversion efficiencies up to 9\% relative as compared to cells with the CdS/i-ZnO buffer system. Peak efficiencies of 18\% with small laboratory cells and 15-2\% with 10 {\texttimes} 10 cm2 mini-modules were demonstrated.",

keywords = "Buffer layer, CIGS, Chemical bath deposition, In-line co-evaporation, Sputtering",

author = "D. Hariskos and B. Fuchs and R. Menner and N. Naghavi and C. Hubert and D. Lincot and M. Powalla",

year = "2009",

month = nov,

day = "1",

doi = "10.1002/pip.897",

language = "English",

volume = "17",

pages = "479--488",

journal = "Progress in Photovoltaics: Research and Applications",

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Hariskos, D, Fuchs, B, Menner, R, Naghavi, N, Hubert, C, Lincot, D & Powalla, M 2009, 'The Zn(S,O,OH)/ZnMgO buffer in thin-film Cu(In,Ga)(Se,S)₂-based solar cells part II: Magnetron sputtering of the ZnMgO buffer layer for in-line co-evaporated Cu(In,Ga)Se₂ solar cells', Progress in Photovoltaics: Research and Applications, vol. 17, no. 7, pp. 479-488. https://doi.org/10.1002/pip.897

The Zn(S,O,OH)/ZnMgO buffer in thin-film Cu(In,Ga)(Se,S)₂-based solar cells part II: Magnetron sputtering of the ZnMgO buffer layer for in-line co-evaporated Cu(In,Ga)Se₂ solar cells. / Hariskos, D.; Fuchs, B.; Menner, R. et al.
In: Progress in Photovoltaics: Research and Applications, Vol. 17, No. 7, 01.11.2009, p. 479-488.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The Zn(S,O,OH)/ZnMgO buffer in thin-film Cu(In,Ga)(Se,S)2-based solar cells part II

T2 - Magnetron sputtering of the ZnMgO buffer layer for in-line co-evaporated Cu(In,Ga)Se2 solar cells

AU - Hariskos, D.

AU - Fuchs, B.

AU - Menner, R.

AU - Naghavi, N.

AU - Hubert, C.

AU - Lincot, D.

AU - Powalla, M.

PY - 2009/11/1

Y1 - 2009/11/1

N2 - A ZnS/Zn1-xMgxO buffer combination was developed to replace the CdS/i-ZnO layers in in-line co-evaporated Cu(In,Ga)Se 2(CIGS)-based solar cells. The ZnS was deposited by the chemical bath deposition (CBD) technique and the Zn1-xMgxO layer by RF magnetron sputtering from ceramic targets. The [Mg]/([Mg] + [Zn]) ratio in the target was varied between x = 0.0 and 0.4. The composition, the crystal structure, and the optical properties of the resulting layers were analyzed. Small laboratory cells and 10×10 cm2 modules were realized with high reproducibility and enhanced stability. The transmission is improved in the wavelength region between 330 and 550 nm for the ZnS/Zn1-xMg xO layers. Therefore, a large gain in the short-circuit current density up to 12% was obtained, which resulted in higher conversion efficiencies up to 9% relative as compared to cells with the CdS/i-ZnO buffer system. Peak efficiencies of 18% with small laboratory cells and 15-2% with 10 × 10 cm2 mini-modules were demonstrated.

AB - A ZnS/Zn1-xMgxO buffer combination was developed to replace the CdS/i-ZnO layers in in-line co-evaporated Cu(In,Ga)Se 2(CIGS)-based solar cells. The ZnS was deposited by the chemical bath deposition (CBD) technique and the Zn1-xMgxO layer by RF magnetron sputtering from ceramic targets. The [Mg]/([Mg] + [Zn]) ratio in the target was varied between x = 0.0 and 0.4. The composition, the crystal structure, and the optical properties of the resulting layers were analyzed. Small laboratory cells and 10×10 cm2 modules were realized with high reproducibility and enhanced stability. The transmission is improved in the wavelength region between 330 and 550 nm for the ZnS/Zn1-xMg xO layers. Therefore, a large gain in the short-circuit current density up to 12% was obtained, which resulted in higher conversion efficiencies up to 9% relative as compared to cells with the CdS/i-ZnO buffer system. Peak efficiencies of 18% with small laboratory cells and 15-2% with 10 × 10 cm2 mini-modules were demonstrated.

KW - Buffer layer

KW - CIGS

KW - Chemical bath deposition

KW - In-line co-evaporation

KW - Sputtering

U2 - 10.1002/pip.897

DO - 10.1002/pip.897

M3 - Article

AN - SCOPUS:70349558403

SN - 1062-7995

VL - 17

SP - 479

EP - 488

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

IS - 7

ER -