THEORETICAL STUDIES OF Si AND GaAs SURFACES AND INITIAL STEPS IN THE OXIDATION.

William A. Goddard; John J. Barton; Antonio Redondo; T. C. McGill

THEORETICAL STUDIES OF Si AND GaAs SURFACES AND INITIAL STEPS IN THE OXIDATION.

William A. Goddard
, John J. Barton
, Antonio Redondo
, T. C. McGill

Research output: Contribution to journal › Article › peer-review

Abstract

Using ab initio quantum chemical methods (generalized valence bond), we examine (i) the electronic states of Si (111) and GaAs (110) surface, (ii) the relaxation of the Si (111) surface, (iii) the reconstruction of the GaAs surface, (iv) the initial steps in the chemisorption of O//2 on Si (111), and (v) the bonding of O atom to Ga and As centers.

Original language	English
Pages (from-to)	1274-1286
Number of pages	13
Journal	J Vac Sci Technol
Volume	15
Issue number	4
Publication status	Published - 1 Jan 1978
Externally published	Yes

Cite this

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title = "THEORETICAL STUDIES OF Si AND GaAs SURFACES AND INITIAL STEPS IN THE OXIDATION.",

abstract = "Using ab initio quantum chemical methods (generalized valence bond), we examine (i) the electronic states of Si (111) and GaAs (110) surface, (ii) the relaxation of the Si (111) surface, (iii) the reconstruction of the GaAs surface, (iv) the initial steps in the chemisorption of O//2 on Si (111), and (v) the bonding of O atom to Ga and As centers.",

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AU - Goddard, William A.

AU - Barton, John J.

AU - Redondo, Antonio

AU - McGill, T. C.

PY - 1978/1/1

Y1 - 1978/1/1

N2 - Using ab initio quantum chemical methods (generalized valence bond), we examine (i) the electronic states of Si (111) and GaAs (110) surface, (ii) the relaxation of the Si (111) surface, (iii) the reconstruction of the GaAs surface, (iv) the initial steps in the chemisorption of O//2 on Si (111), and (v) the bonding of O atom to Ga and As centers.

AB - Using ab initio quantum chemical methods (generalized valence bond), we examine (i) the electronic states of Si (111) and GaAs (110) surface, (ii) the relaxation of the Si (111) surface, (iii) the reconstruction of the GaAs surface, (iv) the initial steps in the chemisorption of O//2 on Si (111), and (v) the bonding of O atom to Ga and As centers.

UR - https://www.scopus.com/pages/publications/0017994908

M3 - Article

AN - SCOPUS:0017994908

VL - 15

SP - 1274

EP - 1286

JO - J Vac Sci Technol

JF - J Vac Sci Technol

IS - 4

ER -

THEORETICAL STUDIES OF Si AND GaAs SURFACES AND INITIAL STEPS IN THE OXIDATION.

Abstract

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