THEORETICAL STUDIES OF THE RECONSTRUCTION OF THE (110) SURFACE OF III-V AND II-VI SEMICONDUCTOR COMPOUNDS.

C. A. Swarts; W. A. Goddard; T. C. McGill

doi:10.1116/1.570652

THEORETICAL STUDIES OF THE RECONSTRUCTION OF THE (110) SURFACE OF III-V AND II-VI SEMICONDUCTOR COMPOUNDS.

C. A. Swarts
, W. A. Goddard
, T. C. McGill

Research output: Contribution to journal › Conference article › peer-review

Abstract

The reconstruction of the (110) surface of various III-V semiconductor compounds (GaAs, GaP, GaN, AlAs, AlP, AlN, BAs, BP, BN) has been investigated by applying quantum chemical methods to small clusters representative of these surfaces. Application of these techniques to GaAs (110) leads to a surface shear (0. 67 A) in excellent agreement with experimental values (0. 65-0. 70 A). The results lead to trends in the surface distortions and reconstruction consistent with those predicted from local valence considerations. Possibilities for the electronic structure of II-VI semiconductor compounds are also examined.

Original language	English
Pages (from-to)	982-986
Number of pages	5
Journal	J Vac Sci Technol
Volume	17
Issue number	5
DOIs	https://doi.org/10.1116/1.570652
Publication status	Published - 1 Jan 1980
Externally published	Yes
Event	Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 7th - Estes Park, CO, USA Duration: 29 Jan 1980 → 31 Jan 1980

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10.1116/1.570652

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@article{e58e3f41ae184d8cbf0d6b1ecb83a451,

title = "THEORETICAL STUDIES OF THE RECONSTRUCTION OF THE (110) SURFACE OF III-V AND II-VI SEMICONDUCTOR COMPOUNDS.",

abstract = "The reconstruction of the (110) surface of various III-V semiconductor compounds (GaAs, GaP, GaN, AlAs, AlP, AlN, BAs, BP, BN) has been investigated by applying quantum chemical methods to small clusters representative of these surfaces. Application of these techniques to GaAs (110) leads to a surface shear (0. 67 A) in excellent agreement with experimental values (0. 65-0. 70 A). The results lead to trends in the surface distortions and reconstruction consistent with those predicted from local valence considerations. Possibilities for the electronic structure of II-VI semiconductor compounds are also examined.",

author = "Swarts, \{C. A.\} and Goddard, \{W. A.\} and McGill, \{T. C.\}",

year = "1980",

month = jan,

day = "1",

doi = "10.1116/1.570652",

language = "English",

volume = "17",

pages = "982--986",

journal = "J Vac Sci Technol",

number = "5",

note = "Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 7th ; Conference date: 29-01-1980 Through 31-01-1980",

}

TY - JOUR

T1 - THEORETICAL STUDIES OF THE RECONSTRUCTION OF THE (110) SURFACE OF III-V AND II-VI SEMICONDUCTOR COMPOUNDS.

AU - Swarts, C. A.

AU - Goddard, W. A.

AU - McGill, T. C.

PY - 1980/1/1

Y1 - 1980/1/1

N2 - The reconstruction of the (110) surface of various III-V semiconductor compounds (GaAs, GaP, GaN, AlAs, AlP, AlN, BAs, BP, BN) has been investigated by applying quantum chemical methods to small clusters representative of these surfaces. Application of these techniques to GaAs (110) leads to a surface shear (0. 67 A) in excellent agreement with experimental values (0. 65-0. 70 A). The results lead to trends in the surface distortions and reconstruction consistent with those predicted from local valence considerations. Possibilities for the electronic structure of II-VI semiconductor compounds are also examined.

AB - The reconstruction of the (110) surface of various III-V semiconductor compounds (GaAs, GaP, GaN, AlAs, AlP, AlN, BAs, BP, BN) has been investigated by applying quantum chemical methods to small clusters representative of these surfaces. Application of these techniques to GaAs (110) leads to a surface shear (0. 67 A) in excellent agreement with experimental values (0. 65-0. 70 A). The results lead to trends in the surface distortions and reconstruction consistent with those predicted from local valence considerations. Possibilities for the electronic structure of II-VI semiconductor compounds are also examined.

UR - https://www.scopus.com/pages/publications/0019056749

U2 - 10.1116/1.570652

DO - 10.1116/1.570652

M3 - Conference article

AN - SCOPUS:0019056749

VL - 17

SP - 982

EP - 986

JO - J Vac Sci Technol

JF - J Vac Sci Technol

IS - 5

T2 - Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 7th

Y2 - 29 January 1980 through 31 January 1980

ER -

THEORETICAL STUDIES OF THE RECONSTRUCTION OF THE (110) SURFACE OF III-V AND II-VI SEMICONDUCTOR COMPOUNDS.

Abstract

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