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Theoretical study of the MAPbI3/SnO2 interface band offset in perovskite solar cells considering mobile ions

  • Institut Photovoltaïque d'Ile-de-France

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work investigates the band offset influence at the MAPbI3/SnO2 interface by an electronic-ionic drift-diffusion model with an emphasis on utilizing realistic band offset values. We validate the model by comparison with experimental measurements and discuss the effect of different concentrations of fast positive and slow negative ions in the perovskite layer. Band offset < 0.1 eV at the perovskite/electron transport layer interface is proposed to allow ideal carrier transport with negligible hysteresis, regardless of the presence of mobile ions. Reducing the band offset thus stands out as a more feasible way to optimize the performance of perovskite and perovskite/silicon-based tandem solar cells.

Original languageEnglish
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages841-848
Number of pages8
ISBN (Electronic)9781728104942
DOIs
Publication statusPublished - 1 Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: 16 Jun 201921 Jun 2019

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States
CityChicago
Period16/06/1921/06/19

Keywords

  • band offset
  • drift-diffusion
  • halide perovskite
  • interfaces
  • mobile ions

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