Abstract
We outline a method to determine the intensity of the second harmonic emitted from a semiconductor surface. Calculations have been carried out for Si(111)/As and compared with second-harmonic generation experiments carried out on the same surface.
| Original language | English |
|---|---|
| Pages (from-to) | 693-698 |
| Number of pages | 6 |
| Journal | Surface Science |
| Volume | 287-288 |
| Issue number | PART 2 |
| DOIs | |
| Publication status | Published - 10 May 1993 |
| Externally published | Yes |