Thermal and photon-assisted interaction of ammonia, silane and oxygen with indium phosphide substrates

F. Houzay; J. M. Moison; C. Licoppe; Y. I. Nissim

doi:10.1016/0042-207X(90)90461-7

Thermal and photon-assisted interaction of ammonia, silane and oxygen with indium phosphide substrates

F. Houzay, J. M. Moison, C. Licoppe, Y. I. Nissim

Centre National d'Etudes

Research output: Contribution to journal › Article › peer-review

Abstract

The first stages of the interaction between InP substrates and gases used in chemical vapor deposition processes (NH₃, SiH₄ and O₂) with and without the assistance of uv illumination have been studied for the first time in an uhv environment by surface techniques. Photo-assisted NH₃ exposures lead to a nitrogen uptake in opposition to thermally-assisted exposures. Photo or thermally-assisted SiH₄ exposures partly remove the native oxide and drive silicon atoms to form covalent bonds to InP. Successive exposures to SiH₄ and O₂ build the first silica layers.

Original language	English
Pages (from-to)	718-719
Number of pages	2
Journal	Vacuum
Volume	41
Issue number	1-3
DOIs	https://doi.org/10.1016/0042-207X(90)90461-7
Publication status	Published - 1 Jan 1990
Externally published	Yes

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@article{9acb259298984e9ebb5824576aba5042,

title = "Thermal and photon-assisted interaction of ammonia, silane and oxygen with indium phosphide substrates",

abstract = "The first stages of the interaction between InP substrates and gases used in chemical vapor deposition processes (NH3, SiH4 and O2) with and without the assistance of uv illumination have been studied for the first time in an uhv environment by surface techniques. Photo-assisted NH3 exposures lead to a nitrogen uptake in opposition to thermally-assisted exposures. Photo or thermally-assisted SiH4 exposures partly remove the native oxide and drive silicon atoms to form covalent bonds to InP. Successive exposures to SiH4 and O2 build the first silica layers.",

author = "F. Houzay and Moison, \{J. M.\} and C. Licoppe and Nissim, \{Y. I.\}",

year = "1990",

month = jan,

day = "1",

doi = "10.1016/0042-207X(90)90461-7",

language = "English",

volume = "41",

pages = "718--719",

journal = "Vacuum",

issn = "0042-207X",

number = "1-3",

}

TY - JOUR

T1 - Thermal and photon-assisted interaction of ammonia, silane and oxygen with indium phosphide substrates

AU - Houzay, F.

AU - Moison, J. M.

AU - Licoppe, C.

AU - Nissim, Y. I.

PY - 1990/1/1

Y1 - 1990/1/1

N2 - The first stages of the interaction between InP substrates and gases used in chemical vapor deposition processes (NH3, SiH4 and O2) with and without the assistance of uv illumination have been studied for the first time in an uhv environment by surface techniques. Photo-assisted NH3 exposures lead to a nitrogen uptake in opposition to thermally-assisted exposures. Photo or thermally-assisted SiH4 exposures partly remove the native oxide and drive silicon atoms to form covalent bonds to InP. Successive exposures to SiH4 and O2 build the first silica layers.

AB - The first stages of the interaction between InP substrates and gases used in chemical vapor deposition processes (NH3, SiH4 and O2) with and without the assistance of uv illumination have been studied for the first time in an uhv environment by surface techniques. Photo-assisted NH3 exposures lead to a nitrogen uptake in opposition to thermally-assisted exposures. Photo or thermally-assisted SiH4 exposures partly remove the native oxide and drive silicon atoms to form covalent bonds to InP. Successive exposures to SiH4 and O2 build the first silica layers.

U2 - 10.1016/0042-207X(90)90461-7

DO - 10.1016/0042-207X(90)90461-7

M3 - Article

AN - SCOPUS:0025532166

SN - 0042-207X

VL - 41

SP - 718

EP - 719

JO - Vacuum

JF - Vacuum

IS - 1-3

ER -

Thermal and photon-assisted interaction of ammonia, silane and oxygen with indium phosphide substrates

Abstract

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