Thermal behavior of atomic hydrogen passivated acceptors in p-InP

E. V.K. Rao; B. Theys; Y. Gottesman; H. Bissessur

Thermal behavior of atomic hydrogen passivated acceptors in p-InP

E. V.K. Rao, B. Theys, Y. Gottesman, H. Bissessur

France Telecom

Research output: Contribution to journal › Conference article › peer-review

Abstract

The Zn and Be doped (1 to 2×10¹⁸ cm^-3) p-InP samples are first hydrogenated by exposing to a deuterium (D) plasma to passivate (or neutralize) acceptors through dopant-H interactions. Later on, subsequent to 10 min isochronal anneals up to 450 °C, the reactivation of holes is monitored to determine activation energies, approximately 0.7 eV for Zn and 1.08 eV for Be. These values clearly imply a good thermal stability of acceptor passivation and open a way for the implementation of hydrogenation in the photon device technology.

Original language	English
Pages (from-to)	241-244
Number of pages	4
Journal	Conference Proceedings-International Conference on Indium Phosphide and Related Materials
Publication status	Published - 1 Jan 1999
Externally published	Yes
Event	Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) - Davos, Switz Duration: 16 May 1999 → 20 May 1999

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title = "Thermal behavior of atomic hydrogen passivated acceptors in p-InP",

abstract = "The Zn and Be doped (1 to 2×1018 cm-3) p-InP samples are first hydrogenated by exposing to a deuterium (D) plasma to passivate (or neutralize) acceptors through dopant-H interactions. Later on, subsequent to 10 min isochronal anneals up to 450 °C, the reactivation of holes is monitored to determine activation energies, approximately 0.7 eV for Zn and 1.08 eV for Be. These values clearly imply a good thermal stability of acceptor passivation and open a way for the implementation of hydrogenation in the photon device technology.",

author = "Rao, \{E. V.K.\} and B. Theys and Y. Gottesman and H. Bissessur",

year = "1999",

month = jan,

day = "1",

language = "English",

pages = "241--244",

journal = "Conference Proceedings-International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

note = "Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) ; Conference date: 16-05-1999 Through 20-05-1999",

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TY - JOUR

T1 - Thermal behavior of atomic hydrogen passivated acceptors in p-InP

AU - Rao, E. V.K.

AU - Theys, B.

AU - Gottesman, Y.

AU - Bissessur, H.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - The Zn and Be doped (1 to 2×1018 cm-3) p-InP samples are first hydrogenated by exposing to a deuterium (D) plasma to passivate (or neutralize) acceptors through dopant-H interactions. Later on, subsequent to 10 min isochronal anneals up to 450 °C, the reactivation of holes is monitored to determine activation energies, approximately 0.7 eV for Zn and 1.08 eV for Be. These values clearly imply a good thermal stability of acceptor passivation and open a way for the implementation of hydrogenation in the photon device technology.

AB - The Zn and Be doped (1 to 2×1018 cm-3) p-InP samples are first hydrogenated by exposing to a deuterium (D) plasma to passivate (or neutralize) acceptors through dopant-H interactions. Later on, subsequent to 10 min isochronal anneals up to 450 °C, the reactivation of holes is monitored to determine activation energies, approximately 0.7 eV for Zn and 1.08 eV for Be. These values clearly imply a good thermal stability of acceptor passivation and open a way for the implementation of hydrogenation in the photon device technology.

M3 - Conference article

AN - SCOPUS:0032646553

SN - 1092-8669

SP - 241

EP - 244

JO - Conference Proceedings-International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings-International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM)

Y2 - 16 May 1999 through 20 May 1999

ER -

Thermal behavior of atomic hydrogen passivated acceptors in p-InP

Abstract

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