Thermal dependence of the emission linewidth of 1.52-μm single mode InAs/InP quantum dot lasers

  • J. Duan
  • , B. Dong
  • , H. Huang
  • , Z. G. Lu
  • , P. J. Poole
  • , F. Grillot

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper experimentally investigates the thermal dependence of the emission linewidth of 1.52-μm single mode InAs/lnP quantum dot lasers. Using a distributed feedback cavity made with symmetric antireflection coatings, a minimum linewidth of 300 kHz is unveiled. This narrow line is found rather constant with the injection current and the temperature range (293 K - 313 K). However, under certain operating conditions, a linewidth rebroadening is also observed, which may be attributed to the spectral hole burning and to the variations of the alpha-factor with the temperature and bias current. Nevertheless, these results confirm the potential of this technology for manufacturing low-phase noise oscillators for coherent optical communications.

Original languageEnglish
Title of host publication2019 Compound Semiconductor Week, CSW 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728100807
DOIs
Publication statusPublished - 1 May 2019
Externally publishedYes
Event2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan
Duration: 19 May 201923 May 2019

Publication series

Name2019 Compound Semiconductor Week, CSW 2019 - Proceedings

Conference

Conference2019 Compound Semiconductor Week, CSW 2019
Country/TerritoryJapan
CityNara
Period19/05/1923/05/19

Keywords

  • Distributed feedback lasers
  • Quantum dots
  • rebroadening
  • spectral linewidth

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