Abstract
In this paper, we present an experimental study of the thermal emission and band-filling effects on the rise time in high-quality InGaAs/InAs/GaAs quantum dots emitting at 1.2 μm at 10 K. At excitation density of 104 W cm -2, the photoluminescence rise time, which is dominated by the relaxation time, of the ground and first excited states are independent of temperature (40 ps). At excitation density of 5600 W cm-2 the ground (first excited) state photoluminescence rise time varies from 90 ps (110 ps) at 10 K to 40 ps (70 ps) at 160 K. This behavior is attributed to the band-filling and the thermal emission effects on the efficiency of the relaxation.
| Original language | English |
|---|---|
| Pages (from-to) | 22-27 |
| Number of pages | 6 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 28 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Jun 2005 |
Keywords
- Excitation density
- Photoluminescence
- Quantum dots
- Relaxation
- Rise time
- Temperature
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