Thermal evolution of vacancy defects induced in sintered UO                         2                          disks by helium implantation

H. Labrim; M. F. Barthe; P. Desgardin; T. Sauvage; G. Blondiaux; C. Corbel; J. P. Piron

doi:10.1016/j.apsusc.2005.08.114

Thermal evolution of vacancy defects induced in sintered UO ₂ disks by helium implantation

H. Labrim
, M. F. Barthe
, P. Desgardin
, T. Sauvage
, G. Blondiaux
, C. Corbel
, J. P. Piron

Research output: Contribution to journal › Conference article › peer-review

Abstract

A slow positron beam coupled with Doppler broadening (DB) spectrometer was used to measure the low- and high-momentum annihilation fractions, S and W, respectively, as a function of positron energy in UO ₂ disks implanted with different 1 MeV ³ He fluences and annealed in ArH ₂ or in vacuum. The S(E) and W(E) behaviors indicate that for fluences in the range from 2 × 10 ¹⁴ to 2 × 10 ¹⁶ ³ He cm ^-2 , the vacancy defects distribution evolves with the annealing temperature in the range from 264 to 700 °C under ArH ₂ . This evolution is found to be dependent on the ³ He fluence implanted in the sintered UO ₂ disks. For the lowest fluence of 2 × 10 ¹⁴ ³ He cm ^-2 , the S(W) plot with positron energy as the running parameter suggests that only the concentration of vacancy defects decreases when annealing temperature increases. For the highest implantation fluences (from 5 × 10 ¹⁵ to 2 × 10 ¹⁶ ³ He cm ^-2 ) the S(W) plot suggests that the nature of the vacancy defects changes in the annealing temperature range from 260 to 400 °C. Measurements performed in implanted UO ₂ disks annealed in vacuum have revealed a partial recovery of the vacancy defects possibly due to their recombination with mobile oxygen interstitials. The role of the hydrogen infusion into the disk is also discussed.

Original language	English
Pages (from-to)	3262-3268
Number of pages	7
Journal	Applied Surface Science
Volume	252
Issue number	9
DOIs	https://doi.org/10.1016/j.apsusc.2005.08.114
Publication status	Published - 28 Feb 2006
Event	Proceedings of the Tenth International Workshop on Slow Positron Beam Techniques for Solids and Surfaces SLOPOS-10 - Duration: 19 Mar 2005 → 25 Mar 2005

Keywords

Doppler broadening
Helium implantation
Hydrogen
Slow positron beam
Thermal evolution
Uranium dioxide
Vacancy defects

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10.1016/j.apsusc.2005.08.114

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Labrim, H., Barthe, M. F., Desgardin, P., Sauvage, T., Blondiaux, G., Corbel, C., & Piron, J. P. (2006). Thermal evolution of vacancy defects induced in sintered UO ₂ disks by helium implantation Applied Surface Science, 252(9), 3262-3268. https://doi.org/10.1016/j.apsusc.2005.08.114

@article{264954596f25477b91a609744dc67056,

title = " Thermal evolution of vacancy defects induced in sintered UO 2 disks by helium implantation ",

abstract = " A slow positron beam coupled with Doppler broadening (DB) spectrometer was used to measure the low- and high-momentum annihilation fractions, S and W, respectively, as a function of positron energy in UO 2 disks implanted with different 1 MeV 3 He fluences and annealed in ArH 2 or in vacuum. The S(E) and W(E) behaviors indicate that for fluences in the range from 2 × 10 14 to 2 × 10 16 3 He cm -2 , the vacancy defects distribution evolves with the annealing temperature in the range from 264 to 700 °C under ArH 2 . This evolution is found to be dependent on the 3 He fluence implanted in the sintered UO 2 disks. For the lowest fluence of 2 × 10 14 3 He cm -2 , the S(W) plot with positron energy as the running parameter suggests that only the concentration of vacancy defects decreases when annealing temperature increases. For the highest implantation fluences (from 5 × 10 15 to 2 × 10 16 3 He cm -2 ) the S(W) plot suggests that the nature of the vacancy defects changes in the annealing temperature range from 260 to 400 °C. Measurements performed in implanted UO 2 disks annealed in vacuum have revealed a partial recovery of the vacancy defects possibly due to their recombination with mobile oxygen interstitials. The role of the hydrogen infusion into the disk is also discussed.",

keywords = "Doppler broadening, Helium implantation, Hydrogen, Slow positron beam, Thermal evolution, Uranium dioxide, Vacancy defects",

author = "H. Labrim and Barthe, \{M. F.\} and P. Desgardin and T. Sauvage and G. Blondiaux and C. Corbel and Piron, \{J. P.\}",

year = "2006",

month = feb,

day = "28",

doi = "10.1016/j.apsusc.2005.08.114",

language = "English",

volume = "252",

pages = "3262--3268",

journal = "Applied Surface Science",

issn = "0169-4332",

number = "9",

note = "Proceedings of the Tenth International Workshop on Slow Positron Beam Techniques for Solids and Surfaces SLOPOS-10 ; Conference date: 19-03-2005 Through 25-03-2005",

}

Labrim, H, Barthe, MF, Desgardin, P, Sauvage, T, Blondiaux, G, Corbel, C & Piron, JP 2006, ' Thermal evolution of vacancy defects induced in sintered UO ₂ disks by helium implantation ', Applied Surface Science, vol. 252, no. 9, pp. 3262-3268. https://doi.org/10.1016/j.apsusc.2005.08.114

Thermal evolution of vacancy defects induced in sintered UO ₂ disks by helium implantation . / Labrim, H.; Barthe, M. F.; Desgardin, P. et al.
In: Applied Surface Science, Vol. 252, No. 9, 28.02.2006, p. 3262-3268.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Thermal evolution of vacancy defects induced in sintered UO 2 disks by helium implantation

AU - Labrim, H.

AU - Barthe, M. F.

AU - Desgardin, P.

AU - Sauvage, T.

AU - Blondiaux, G.

AU - Corbel, C.

AU - Piron, J. P.

PY - 2006/2/28

Y1 - 2006/2/28

N2 - A slow positron beam coupled with Doppler broadening (DB) spectrometer was used to measure the low- and high-momentum annihilation fractions, S and W, respectively, as a function of positron energy in UO 2 disks implanted with different 1 MeV 3 He fluences and annealed in ArH 2 or in vacuum. The S(E) and W(E) behaviors indicate that for fluences in the range from 2 × 10 14 to 2 × 10 16 3 He cm -2 , the vacancy defects distribution evolves with the annealing temperature in the range from 264 to 700 °C under ArH 2 . This evolution is found to be dependent on the 3 He fluence implanted in the sintered UO 2 disks. For the lowest fluence of 2 × 10 14 3 He cm -2 , the S(W) plot with positron energy as the running parameter suggests that only the concentration of vacancy defects decreases when annealing temperature increases. For the highest implantation fluences (from 5 × 10 15 to 2 × 10 16 3 He cm -2 ) the S(W) plot suggests that the nature of the vacancy defects changes in the annealing temperature range from 260 to 400 °C. Measurements performed in implanted UO 2 disks annealed in vacuum have revealed a partial recovery of the vacancy defects possibly due to their recombination with mobile oxygen interstitials. The role of the hydrogen infusion into the disk is also discussed.

AB - A slow positron beam coupled with Doppler broadening (DB) spectrometer was used to measure the low- and high-momentum annihilation fractions, S and W, respectively, as a function of positron energy in UO 2 disks implanted with different 1 MeV 3 He fluences and annealed in ArH 2 or in vacuum. The S(E) and W(E) behaviors indicate that for fluences in the range from 2 × 10 14 to 2 × 10 16 3 He cm -2 , the vacancy defects distribution evolves with the annealing temperature in the range from 264 to 700 °C under ArH 2 . This evolution is found to be dependent on the 3 He fluence implanted in the sintered UO 2 disks. For the lowest fluence of 2 × 10 14 3 He cm -2 , the S(W) plot with positron energy as the running parameter suggests that only the concentration of vacancy defects decreases when annealing temperature increases. For the highest implantation fluences (from 5 × 10 15 to 2 × 10 16 3 He cm -2 ) the S(W) plot suggests that the nature of the vacancy defects changes in the annealing temperature range from 260 to 400 °C. Measurements performed in implanted UO 2 disks annealed in vacuum have revealed a partial recovery of the vacancy defects possibly due to their recombination with mobile oxygen interstitials. The role of the hydrogen infusion into the disk is also discussed.

KW - Doppler broadening

KW - Helium implantation

KW - Hydrogen

KW - Slow positron beam

KW - Thermal evolution

KW - Uranium dioxide

KW - Vacancy defects

U2 - 10.1016/j.apsusc.2005.08.114

DO - 10.1016/j.apsusc.2005.08.114

M3 - Conference article

AN - SCOPUS:32644458585

SN - 0169-4332

VL - 252

SP - 3262

EP - 3268

JO - Applied Surface Science

JF - Applied Surface Science

IS - 9

T2 - Proceedings of the Tenth International Workshop on Slow Positron Beam Techniques for Solids and Surfaces SLOPOS-10

Y2 - 19 March 2005 through 25 March 2005

ER -

Thermal evolution of vacancy defects induced in sintered UO 2 disks by helium implantation

Abstract

Keywords

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Thermal evolution of vacancy defects induced in sintered UO ₂ disks by helium implantation