Thermalisation rate study of GaSb-based heterostructures by continuous wave photoluminescence and their potential as hot carrier solar cell absorbers

A. Le Bris; L. Lombez; S. Laribi; G. Boissier; P. Christol; J. F. Guillemoles

doi:10.1039/c2ee02843c

Thermalisation rate study of GaSb-based heterostructures by continuous wave photoluminescence and their potential as hot carrier solar cell absorbers

A. Le Bris
, L. Lombez
, S. Laribi
, G. Boissier
, P. Christol
, J. F. Guillemoles

Lamsid/EDF/R and D
Centre national de la recherche scientifique
PSL University
IES Institut d'Electronique et des Systèmes

Research output: Contribution to journal › Article › peer-review

Abstract

GaSb-based heterostructures are tested as candidates for a hot carrier solar cell absorber. Their thermalisation properties are investigated using continuous wave photoluminescence. Non-equilibrium carrier populations are detected at high excitation levels. An empirical expression of the power lost by thermalisation is deduced from the incident power dependent carrier temperature. The experimentally determined thermalisation rate is then used to simulate the potential efficiency of a hot carrier solar cell, showing a significant efficiency improvement compared to a fully thermalised single p-n junction of similar bandgap.

Original language	English
Pages (from-to)	6225-6232
Number of pages	8
Journal	Energy and Environmental Science
Volume	5
Issue number	3
DOIs	https://doi.org/10.1039/c2ee02843c
Publication status	Published - 1 Mar 2012

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This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1039/c2ee02843c

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abstract = "GaSb-based heterostructures are tested as candidates for a hot carrier solar cell absorber. Their thermalisation properties are investigated using continuous wave photoluminescence. Non-equilibrium carrier populations are detected at high excitation levels. An empirical expression of the power lost by thermalisation is deduced from the incident power dependent carrier temperature. The experimentally determined thermalisation rate is then used to simulate the potential efficiency of a hot carrier solar cell, showing a significant efficiency improvement compared to a fully thermalised single p-n junction of similar bandgap.",

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AU - Le Bris, A.

AU - Lombez, L.

AU - Laribi, S.

AU - Boissier, G.

AU - Christol, P.

AU - Guillemoles, J. F.

PY - 2012/3/1

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N2 - GaSb-based heterostructures are tested as candidates for a hot carrier solar cell absorber. Their thermalisation properties are investigated using continuous wave photoluminescence. Non-equilibrium carrier populations are detected at high excitation levels. An empirical expression of the power lost by thermalisation is deduced from the incident power dependent carrier temperature. The experimentally determined thermalisation rate is then used to simulate the potential efficiency of a hot carrier solar cell, showing a significant efficiency improvement compared to a fully thermalised single p-n junction of similar bandgap.

AB - GaSb-based heterostructures are tested as candidates for a hot carrier solar cell absorber. Their thermalisation properties are investigated using continuous wave photoluminescence. Non-equilibrium carrier populations are detected at high excitation levels. An empirical expression of the power lost by thermalisation is deduced from the incident power dependent carrier temperature. The experimentally determined thermalisation rate is then used to simulate the potential efficiency of a hot carrier solar cell, showing a significant efficiency improvement compared to a fully thermalised single p-n junction of similar bandgap.

U2 - 10.1039/c2ee02843c

DO - 10.1039/c2ee02843c

M3 - Article

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SN - 1754-5692

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JO - Energy and Environmental Science

JF - Energy and Environmental Science

IS - 3

ER -

Thermalisation rate study of GaSb-based heterostructures by continuous wave photoluminescence and their potential as hot carrier solar cell absorbers

Abstract

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