@inproceedings{b0b52f9a332544ad86653b3fed346e06,
title = "Thin film dielectric Deposition by Rapid thermal CVD for InP device applications",
abstract = "Rapid thermal Chemical Vapour Deposition was utilized to deposit silicon based dielectrics on InP at high temperature. Silicon oxynitride films can be deposited on InP at 750°C with deposition rates as high as 100 A/s. The composition of the films can be varied continuously with the oxydant gas flow rate from silicon dioxide to silicon nitride. With this process the substate is not degraded and the films are of device quality. A highly sensitive optical set-up has been developed to measure the tension in a dielectric/InP structure and thus to determine the stoichiometry of the SiOxNy film which leaves the structure unstressed.",
author = "F. Lebland and C. Licoppe and Nissim, \{Y. I.\}",
note = "Publisher Copyright: {\textcopyright} 1992 IEEE.; LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 ; Conference date: 21-04-1992 Through 24-04-1992",
year = "1992",
month = jan,
day = "1",
doi = "10.1109/ICIPRM.1992.235552",
language = "English",
series = "LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "654--657",
booktitle = "LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992",
}