Thinning of CIGS solar cells: Part I: Chemical processing in acidic bromine solutions

M. Bouttemy; P. Tran-Van; I. Gerard; T. Hildebrandt; A. Causier; J. L. Pelouard; G. Dagher; Z. Jehl; N. Naghavi; G. Voorwinden; B. Dimmler; M. Powalla; J. F. Guillemoles; D. Lincot; A. Etcheberry

doi:10.1016/j.tsf.2010.12.219

Thinning of CIGS solar cells: Part I: Chemical processing in acidic bromine solutions

M. Bouttemy
, P. Tran-Van
, I. Gerard
, T. Hildebrandt
, A. Causier
, J. L. Pelouard
, G. Dagher
, Z. Jehl
, N. Naghavi
, G. Voorwinden
, B. Dimmler
, M. Powalla
, J. F. Guillemoles
, D. Lincot
, A. Etcheberry

Institut Lavoisier de Versailles
Centre de Nanosciences et de Nanotechnologies
Centre national de la recherche scientifique
Wuerth Elektronik Research GmbH
Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

CIGSe absorber was etched in HBr/Br₂/H₂O to prepare defined thicknesses of CIGSe between 2.7 and 0.5 μm. We established a reproducible method of reducing the absorber thickness via chemical etching. We determine the dissolution kinetics rate of CIGSe using trace analysis by graphite furnace atomic absorption spectrometry of Ga and Cu. The roughness of the etching surface decreases during the first 500 nm of the etching to a steady state value of the root-mean-square roughness near 50 nm. X-ray photoelectron spectroscopy analyses demonstrate an etching process occurring with a constant chemical composition of the treated surface acidic bromine solutions provide a controlled chemical thinning process resulting in an almost flat surface and a very low superficial Se⁰ enrichment.

Original language	English
Pages (from-to)	7207-7211
Number of pages	5
Journal	Thin Solid Films
Volume	519
Issue number	21
DOIs	https://doi.org/10.1016/j.tsf.2010.12.219
Publication status	Published - 31 Aug 2011

Keywords

AFM
Bromine
CIGS
Dissolution kinetic
Etching
GF-AAS
Roughness
Selenium
XPS

Access to Document

10.1016/j.tsf.2010.12.219

Cite this

Bouttemy, M., Tran-Van, P., Gerard, I., Hildebrandt, T., Causier, A., Pelouard, J. L., Dagher, G., Jehl, Z., Naghavi, N., Voorwinden, G., Dimmler, B., Powalla, M., Guillemoles, J. F., Lincot, D., & Etcheberry, A. (2011). Thinning of CIGS solar cells: Part I: Chemical processing in acidic bromine solutions. Thin Solid Films, 519(21), 7207-7211. https://doi.org/10.1016/j.tsf.2010.12.219

@article{dae268379d294a1d8acf19523a8ac6c6,

title = "Thinning of CIGS solar cells: Part I: Chemical processing in acidic bromine solutions",

abstract = "CIGSe absorber was etched in HBr/Br2/H2O to prepare defined thicknesses of CIGSe between 2.7 and 0.5 μm. We established a reproducible method of reducing the absorber thickness via chemical etching. We determine the dissolution kinetics rate of CIGSe using trace analysis by graphite furnace atomic absorption spectrometry of Ga and Cu. The roughness of the etching surface decreases during the first 500 nm of the etching to a steady state value of the root-mean-square roughness near 50 nm. X-ray photoelectron spectroscopy analyses demonstrate an etching process occurring with a constant chemical composition of the treated surface acidic bromine solutions provide a controlled chemical thinning process resulting in an almost flat surface and a very low superficial Se0 enrichment.",

keywords = "AFM, Bromine, CIGS, Dissolution kinetic, Etching, GF-AAS, Roughness, Selenium, XPS",

author = "M. Bouttemy and P. Tran-Van and I. Gerard and T. Hildebrandt and A. Causier and Pelouard, \{J. L.\} and G. Dagher and Z. Jehl and N. Naghavi and G. Voorwinden and B. Dimmler and M. Powalla and Guillemoles, \{J. F.\} and D. Lincot and A. Etcheberry",

year = "2011",

month = aug,

day = "31",

doi = "10.1016/j.tsf.2010.12.219",

language = "English",

volume = "519",

pages = "7207--7211",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "21",

}

Bouttemy, M, Tran-Van, P, Gerard, I, Hildebrandt, T, Causier, A, Pelouard, JL, Dagher, G, Jehl, Z, Naghavi, N, Voorwinden, G, Dimmler, B, Powalla, M, Guillemoles, JF, Lincot, D & Etcheberry, A 2011, 'Thinning of CIGS solar cells: Part I: Chemical processing in acidic bromine solutions', Thin Solid Films, vol. 519, no. 21, pp. 7207-7211. https://doi.org/10.1016/j.tsf.2010.12.219

TY - JOUR

T1 - Thinning of CIGS solar cells

T2 - Part I: Chemical processing in acidic bromine solutions

AU - Bouttemy, M.

AU - Tran-Van, P.

AU - Gerard, I.

AU - Hildebrandt, T.

AU - Causier, A.

AU - Pelouard, J. L.

AU - Dagher, G.

AU - Jehl, Z.

AU - Naghavi, N.

AU - Voorwinden, G.

AU - Dimmler, B.

AU - Powalla, M.

AU - Guillemoles, J. F.

AU - Lincot, D.

AU - Etcheberry, A.

PY - 2011/8/31

Y1 - 2011/8/31

N2 - CIGSe absorber was etched in HBr/Br2/H2O to prepare defined thicknesses of CIGSe between 2.7 and 0.5 μm. We established a reproducible method of reducing the absorber thickness via chemical etching. We determine the dissolution kinetics rate of CIGSe using trace analysis by graphite furnace atomic absorption spectrometry of Ga and Cu. The roughness of the etching surface decreases during the first 500 nm of the etching to a steady state value of the root-mean-square roughness near 50 nm. X-ray photoelectron spectroscopy analyses demonstrate an etching process occurring with a constant chemical composition of the treated surface acidic bromine solutions provide a controlled chemical thinning process resulting in an almost flat surface and a very low superficial Se0 enrichment.

AB - CIGSe absorber was etched in HBr/Br2/H2O to prepare defined thicknesses of CIGSe between 2.7 and 0.5 μm. We established a reproducible method of reducing the absorber thickness via chemical etching. We determine the dissolution kinetics rate of CIGSe using trace analysis by graphite furnace atomic absorption spectrometry of Ga and Cu. The roughness of the etching surface decreases during the first 500 nm of the etching to a steady state value of the root-mean-square roughness near 50 nm. X-ray photoelectron spectroscopy analyses demonstrate an etching process occurring with a constant chemical composition of the treated surface acidic bromine solutions provide a controlled chemical thinning process resulting in an almost flat surface and a very low superficial Se0 enrichment.

KW - AFM

KW - Bromine

KW - CIGS

KW - Dissolution kinetic

KW - Etching

KW - GF-AAS

KW - Roughness

KW - Selenium

KW - XPS

U2 - 10.1016/j.tsf.2010.12.219

DO - 10.1016/j.tsf.2010.12.219

M3 - Article

AN - SCOPUS:80052142565

SN - 0040-6090

VL - 519

SP - 7207

EP - 7211

JO - Thin Solid Films

JF - Thin Solid Films

IS - 21

ER -

Thinning of CIGS solar cells: Part I: Chemical processing in acidic bromine solutions

Abstract

Keywords

Access to Document

Fingerprint

Cite this