Thinning of CIGS solar cells: Part II: Cell characterizations

Z. Jehl; F. Erfurth; N. Naghavi; L. Lombez; I. Gerard; M. Bouttemy; P. Tran-Van; A. Etcheberry; G. Voorwinden; B. Dimmler; W. Wischmann; M. Powalla; J. F. Guillemoles; D. Lincot

doi:10.1016/j.tsf.2010.12.224

Thinning of CIGS solar cells: Part II: Cell characterizations

Z. Jehl
, F. Erfurth
, N. Naghavi
, L. Lombez
, I. Gerard
, M. Bouttemy
, P. Tran-Van
, A. Etcheberry
, G. Voorwinden
, B. Dimmler
, W. Wischmann
, M. Powalla
, J. F. Guillemoles
, D. Lincot

Centre national de la recherche scientifique
Institut Lavoisier de Versailles
Wuerth Elektronik Research GmbH
Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, the influence of reducing the thickness of the CIGSe absorber layer by bromine etching from 2.5 μm to 0.5 μm on electrical and optical solar cell properties is addressed. We observe a decrease in efficiency which is mainly caused by a reduced short circuit current, whereas the fill factor and the open circuit voltage are stable. Even without deliberate light trapping or anti-reflection coating, an efficiency of 10.3% is obtained for a 0.5 μm thick CIGSe absorber. A smoothing of the absorber surface is observed during the etching, its influence on the cell parameters will be discussed.

Original language	English
Pages (from-to)	7212-7215
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	21
DOIs	https://doi.org/10.1016/j.tsf.2010.12.224
Publication status	Published - 31 Aug 2011

Keywords

CIGSe
Chalcopyrite
Etching
Solar cells
Ultra-thin films

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10.1016/j.tsf.2010.12.224

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title = "Thinning of CIGS solar cells: Part II: Cell characterizations",

abstract = "In this paper, the influence of reducing the thickness of the CIGSe absorber layer by bromine etching from 2.5 μm to 0.5 μm on electrical and optical solar cell properties is addressed. We observe a decrease in efficiency which is mainly caused by a reduced short circuit current, whereas the fill factor and the open circuit voltage are stable. Even without deliberate light trapping or anti-reflection coating, an efficiency of 10.3\% is obtained for a 0.5 μm thick CIGSe absorber. A smoothing of the absorber surface is observed during the etching, its influence on the cell parameters will be discussed.",

keywords = "CIGSe, Chalcopyrite, Etching, Solar cells, Ultra-thin films",

author = "Z. Jehl and F. Erfurth and N. Naghavi and L. Lombez and I. Gerard and M. Bouttemy and P. Tran-Van and A. Etcheberry and G. Voorwinden and B. Dimmler and W. Wischmann and M. Powalla and Guillemoles, \{J. F.\} and D. Lincot",

year = "2011",

month = aug,

day = "31",

doi = "10.1016/j.tsf.2010.12.224",

language = "English",

volume = "519",

pages = "7212--7215",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "21",

}

TY - JOUR

T1 - Thinning of CIGS solar cells

T2 - Part II: Cell characterizations

AU - Jehl, Z.

AU - Erfurth, F.

AU - Naghavi, N.

AU - Lombez, L.

AU - Gerard, I.

AU - Bouttemy, M.

AU - Tran-Van, P.

AU - Etcheberry, A.

AU - Voorwinden, G.

AU - Dimmler, B.

AU - Wischmann, W.

AU - Powalla, M.

AU - Guillemoles, J. F.

AU - Lincot, D.

PY - 2011/8/31

Y1 - 2011/8/31

N2 - In this paper, the influence of reducing the thickness of the CIGSe absorber layer by bromine etching from 2.5 μm to 0.5 μm on electrical and optical solar cell properties is addressed. We observe a decrease in efficiency which is mainly caused by a reduced short circuit current, whereas the fill factor and the open circuit voltage are stable. Even without deliberate light trapping or anti-reflection coating, an efficiency of 10.3% is obtained for a 0.5 μm thick CIGSe absorber. A smoothing of the absorber surface is observed during the etching, its influence on the cell parameters will be discussed.

AB - In this paper, the influence of reducing the thickness of the CIGSe absorber layer by bromine etching from 2.5 μm to 0.5 μm on electrical and optical solar cell properties is addressed. We observe a decrease in efficiency which is mainly caused by a reduced short circuit current, whereas the fill factor and the open circuit voltage are stable. Even without deliberate light trapping or anti-reflection coating, an efficiency of 10.3% is obtained for a 0.5 μm thick CIGSe absorber. A smoothing of the absorber surface is observed during the etching, its influence on the cell parameters will be discussed.

KW - CIGSe

KW - Chalcopyrite

KW - Etching

KW - Solar cells

KW - Ultra-thin films

U2 - 10.1016/j.tsf.2010.12.224

DO - 10.1016/j.tsf.2010.12.224

M3 - Article

AN - SCOPUS:80052150683

SN - 0040-6090

VL - 519

SP - 7212

EP - 7215

JO - Thin Solid Films

JF - Thin Solid Films

IS - 21

ER -

Thinning of CIGS solar cells: Part II: Cell characterizations

Abstract

Keywords

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