Time-of-flight measurements of carrier drift mobilities in polymorphous silicon

M. Brinza; G. J. Adriaenssens; P. Roca i Cabarrocas

doi:10.1016/S0040-6090(02)01157-4

Time-of-flight measurements of carrier drift mobilities in polymorphous silicon

M. Brinza
, G. J. Adriaenssens
, P. Roca i Cabarrocas

KU Leuven

Research output: Contribution to journal › Conference article › peer-review

27 Citations (Scopus)

Abstract

Time-of-flight photoconductivity measurements of carrier drift mobilities in polymorphous silicon were studied. The electron transients in samples deposited at higher pressure exhibited a plateau in the pre-transit domain followed by a power-law decay. A slight increase of the electron mobility was observed with increasing pressure and a mobility increase of up to 10 times was seen on the valence band side.

Original language	English
Pages (from-to)	123-126
Number of pages	4
Journal	Thin Solid Films
Volume	427
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(02)01157-4
Publication status	Published - 3 Mar 2003
Event	E-MRS, K - Strasbourg, France Duration: 18 Jun 2003 → 21 Jun 2003

Keywords

Drift mobility
Polymorphous silicon
Transient photoconductivity

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10.1016/S0040-6090(02)01157-4

Cite this

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title = "Time-of-flight measurements of carrier drift mobilities in polymorphous silicon",

abstract = "Time-of-flight photoconductivity measurements of carrier drift mobilities in polymorphous silicon were studied. The electron transients in samples deposited at higher pressure exhibited a plateau in the pre-transit domain followed by a power-law decay. A slight increase of the electron mobility was observed with increasing pressure and a mobility increase of up to 10 times was seen on the valence band side.",

keywords = "Drift mobility, Polymorphous silicon, Transient photoconductivity",

author = "M. Brinza and Adriaenssens, \{G. J.\} and \{Roca i Cabarrocas\}, P.",

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T1 - Time-of-flight measurements of carrier drift mobilities in polymorphous silicon

AU - Brinza, M.

AU - Adriaenssens, G. J.

AU - Roca i Cabarrocas, P.

PY - 2003/3/3

Y1 - 2003/3/3

N2 - Time-of-flight photoconductivity measurements of carrier drift mobilities in polymorphous silicon were studied. The electron transients in samples deposited at higher pressure exhibited a plateau in the pre-transit domain followed by a power-law decay. A slight increase of the electron mobility was observed with increasing pressure and a mobility increase of up to 10 times was seen on the valence band side.

AB - Time-of-flight photoconductivity measurements of carrier drift mobilities in polymorphous silicon were studied. The electron transients in samples deposited at higher pressure exhibited a plateau in the pre-transit domain followed by a power-law decay. A slight increase of the electron mobility was observed with increasing pressure and a mobility increase of up to 10 times was seen on the valence band side.

KW - Drift mobility

KW - Polymorphous silicon

KW - Transient photoconductivity

U2 - 10.1016/S0040-6090(02)01157-4

DO - 10.1016/S0040-6090(02)01157-4

M3 - Conference article

AN - SCOPUS:0037416681

SN - 0040-6090

VL - 427

SP - 123

EP - 126

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - E-MRS, K

Y2 - 18 June 2003 through 21 June 2003

ER -

Time-of-flight measurements of carrier drift mobilities in polymorphous silicon

Abstract

Keywords

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