Time resolved ultrafast ARPES for the study of topological insulators: The case of Bi2Te3

M. Hajlaoui; E. Papalazarou; J. Mauchain; Z. Jiang; I. Miotkowski; Y. P. Chen; A. Taleb-Ibrahimi; L. Perfetti; M. Marsi

doi:10.1140/epjst/e2013-01921-1

Time resolved ultrafast ARPES for the study of topological insulators: The case of Bi₂Te₃

M. Hajlaoui
, E. Papalazarou
, J. Mauchain
, Z. Jiang
, I. Miotkowski
, Y. P. Chen
, A. Taleb-Ibrahimi
, L. Perfetti
, M. Marsi

Laboratoire de Physique des Solides
School of Physics
College of Computing
Department of Physics
Purdue University
Synchrotron SOLEIL

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

We discuss the application of time-resolved ultrafast angle resolved photoelectron spectroscopy to the study of photoexcited topological insulators. Measurements performed on the prototype material Bi₂Te₃ clearly show that all the main processes involved in the ultrafast surface carrier dynamics of topological insulators can be clearly observed and quantitatively analyzed. The comparison with other experimental results shows that the relative position of surface and bulk conduction bands with respect to the system Fermi level play an essential role in the recombination processes following ultrafast optical excitation.

Original language	English
Pages (from-to)	1271-1275
Number of pages	5
Journal	European Physical Journal: Special Topics
Volume	222
Issue number	5
DOIs	https://doi.org/10.1140/epjst/e2013-01921-1
Publication status	Published - 1 Jul 2013

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title = "Time resolved ultrafast ARPES for the study of topological insulators: The case of Bi2Te3",

abstract = "We discuss the application of time-resolved ultrafast angle resolved photoelectron spectroscopy to the study of photoexcited topological insulators. Measurements performed on the prototype material Bi2Te3 clearly show that all the main processes involved in the ultrafast surface carrier dynamics of topological insulators can be clearly observed and quantitatively analyzed. The comparison with other experimental results shows that the relative position of surface and bulk conduction bands with respect to the system Fermi level play an essential role in the recombination processes following ultrafast optical excitation.",

author = "M. Hajlaoui and E. Papalazarou and J. Mauchain and Z. Jiang and I. Miotkowski and Chen, \{Y. P.\} and A. Taleb-Ibrahimi and L. Perfetti and M. Marsi",

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T1 - Time resolved ultrafast ARPES for the study of topological insulators

T2 - The case of Bi2Te3

AU - Hajlaoui, M.

AU - Papalazarou, E.

AU - Mauchain, J.

AU - Jiang, Z.

AU - Miotkowski, I.

AU - Chen, Y. P.

AU - Taleb-Ibrahimi, A.

AU - Perfetti, L.

AU - Marsi, M.

PY - 2013/7/1

Y1 - 2013/7/1

N2 - We discuss the application of time-resolved ultrafast angle resolved photoelectron spectroscopy to the study of photoexcited topological insulators. Measurements performed on the prototype material Bi2Te3 clearly show that all the main processes involved in the ultrafast surface carrier dynamics of topological insulators can be clearly observed and quantitatively analyzed. The comparison with other experimental results shows that the relative position of surface and bulk conduction bands with respect to the system Fermi level play an essential role in the recombination processes following ultrafast optical excitation.

AB - We discuss the application of time-resolved ultrafast angle resolved photoelectron spectroscopy to the study of photoexcited topological insulators. Measurements performed on the prototype material Bi2Te3 clearly show that all the main processes involved in the ultrafast surface carrier dynamics of topological insulators can be clearly observed and quantitatively analyzed. The comparison with other experimental results shows that the relative position of surface and bulk conduction bands with respect to the system Fermi level play an essential role in the recombination processes following ultrafast optical excitation.

U2 - 10.1140/epjst/e2013-01921-1

DO - 10.1140/epjst/e2013-01921-1

M3 - Article

AN - SCOPUS:84880415477

SN - 1951-6355

VL - 222

SP - 1271

EP - 1275

JO - European Physical Journal: Special Topics

JF - European Physical Journal: Special Topics

IS - 5

ER -

Time resolved ultrafast ARPES for the study of topological insulators: The case of Bi2Te3

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Time resolved ultrafast ARPES for the study of topological insulators: The case of Bi₂Te₃