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Towards Reliability MRAM for Energy-Efficient Spin-orbit Torque Switching

  • Southeast University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work reviews the development of spin orbit torque (SOT) magnetic random access memory (MRAM) with respect to reliability over the past two decades. It presents an in-depth exploration of the foundational knowledge and physical modeling of SOT devices, detailing the impact of process, voltage, and temperature (PVT) variations alongside challenges in read and write reliability. Moreover, this review further investigates and synthesizes the recent advances in reliability enhancement strategies for SOT-MRAM at the device, manufacturing, circuit, and architectural levels. The overarching aim of this review is to foster further research into the reliability of SOT-MRAM within advanced process nodes, emphasizing its potential utility as a versatile general-purpose memory.

Original languageEnglish
Title of host publicationProceedings - 37th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design, SBCCI 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350391695
DOIs
Publication statusPublished - 1 Jan 2024
Event37th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design, SBCCI 2024 - Joao Pessoa, Brazil
Duration: 2 Sept 20246 Sept 2024

Publication series

NameProceedings - 37th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design, SBCCI 2024

Conference

Conference37th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design, SBCCI 2024
Country/TerritoryBrazil
CityJoao Pessoa
Period2/09/246/09/24

Keywords

  • Behavioral modeling
  • Spin orbit torque magnetic random access memory (SOT-MRAM)
  • advanced technology nodes
  • reliability issues

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