Towards ultrathin copper indium gallium diselenide solar cells: Proof of concept study by chemical etching and gold back contact engineering

Zacharie Jehl Li-Kao; Negar Naghavi; Felix Erfurth; Jean François Guillemoles; Isabelle Gérard; Arnaud Etcheberry; Jean Luc Pelouard; Stephane Collin; Georg Voorwinden; Daniel Lincot

doi:10.1002/pip.2162

Towards ultrathin copper indium gallium diselenide solar cells: Proof of concept study by chemical etching and gold back contact engineering

Zacharie Jehl Li-Kao, Negar Naghavi, Felix Erfurth, Jean François Guillemoles, Isabelle Gérard, Arnaud Etcheberry, Jean Luc Pelouard, Stephane Collin, Georg Voorwinden, Daniel Lincot

Research output: Contribution to journal › Article › peer-review

Abstract

An innovative approach combining chemical etching and a "lift-off" process, which allows back contact processing after CIGSe deposition, permitted to use Au as a highly reflective back contact in ultrathin CIGSe solar cells. The Au back contact does not degrade the other parameters of the cell, as good ohmicity on CIGSe is achieved. An important photocurrent increase compared with regular Mo back contact solar cells is achieved by the enhanced light trapping effect due to the back reflector, leading to an absolute efficiency increase of +2.5% for a CIGSe thickness of 0.4 μm. This approach could be used for further investigations in improving the back side of ultrathin CIGSe solar cells.

Original language	English
Pages (from-to)	582-587
Number of pages	6
Journal	Progress in Photovoltaics: Research and Applications
Volume	20
Issue number	5
DOIs	https://doi.org/10.1002/pip.2162
Publication status	Published - 1 Aug 2012

Keywords

CIGSe
back contact
lift-off
light trapping
reflectivity
ultrathin solar cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/pip.2162

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Li-Kao, Z. J., Naghavi, N., Erfurth, F., Guillemoles, J. F., Gérard, I., Etcheberry, A., Pelouard, J. L., Collin, S., Voorwinden, G., & Lincot, D. (2012). Towards ultrathin copper indium gallium diselenide solar cells: Proof of concept study by chemical etching and gold back contact engineering. Progress in Photovoltaics: Research and Applications, 20(5), 582-587. https://doi.org/10.1002/pip.2162

@article{33747092e00a425aa388d722a37b0956,

title = "Towards ultrathin copper indium gallium diselenide solar cells: Proof of concept study by chemical etching and gold back contact engineering",

abstract = "An innovative approach combining chemical etching and a {"}lift-off{"} process, which allows back contact processing after CIGSe deposition, permitted to use Au as a highly reflective back contact in ultrathin CIGSe solar cells. The Au back contact does not degrade the other parameters of the cell, as good ohmicity on CIGSe is achieved. An important photocurrent increase compared with regular Mo back contact solar cells is achieved by the enhanced light trapping effect due to the back reflector, leading to an absolute efficiency increase of +2.5\% for a CIGSe thickness of 0.4 μm. This approach could be used for further investigations in improving the back side of ultrathin CIGSe solar cells.",

keywords = "CIGSe, back contact, lift-off, light trapping, reflectivity, ultrathin solar cells",

author = "Li-Kao, \{Zacharie Jehl\} and Negar Naghavi and Felix Erfurth and Guillemoles, \{Jean Fran{\c c}ois\} and Isabelle G{\'e}rard and Arnaud Etcheberry and Pelouard, \{Jean Luc\} and Stephane Collin and Georg Voorwinden and Daniel Lincot",

year = "2012",

month = aug,

day = "1",

doi = "10.1002/pip.2162",

language = "English",

volume = "20",

pages = "582--587",

journal = "Progress in Photovoltaics: Research and Applications",

issn = "1062-7995",

number = "5",

}

Li-Kao, ZJ, Naghavi, N, Erfurth, F, Guillemoles, JF, Gérard, I, Etcheberry, A, Pelouard, JL, Collin, S, Voorwinden, G & Lincot, D 2012, 'Towards ultrathin copper indium gallium diselenide solar cells: Proof of concept study by chemical etching and gold back contact engineering', Progress in Photovoltaics: Research and Applications, vol. 20, no. 5, pp. 582-587. https://doi.org/10.1002/pip.2162

Towards ultrathin copper indium gallium diselenide solar cells: Proof of concept study by chemical etching and gold back contact engineering. / Li-Kao, Zacharie Jehl; Naghavi, Negar; Erfurth, Felix et al.
In: Progress in Photovoltaics: Research and Applications, Vol. 20, No. 5, 01.08.2012, p. 582-587.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Towards ultrathin copper indium gallium diselenide solar cells

T2 - Proof of concept study by chemical etching and gold back contact engineering

AU - Li-Kao, Zacharie Jehl

AU - Naghavi, Negar

AU - Erfurth, Felix

AU - Guillemoles, Jean François

AU - Gérard, Isabelle

AU - Etcheberry, Arnaud

AU - Pelouard, Jean Luc

AU - Collin, Stephane

AU - Voorwinden, Georg

AU - Lincot, Daniel

PY - 2012/8/1

Y1 - 2012/8/1

N2 - An innovative approach combining chemical etching and a "lift-off" process, which allows back contact processing after CIGSe deposition, permitted to use Au as a highly reflective back contact in ultrathin CIGSe solar cells. The Au back contact does not degrade the other parameters of the cell, as good ohmicity on CIGSe is achieved. An important photocurrent increase compared with regular Mo back contact solar cells is achieved by the enhanced light trapping effect due to the back reflector, leading to an absolute efficiency increase of +2.5% for a CIGSe thickness of 0.4 μm. This approach could be used for further investigations in improving the back side of ultrathin CIGSe solar cells.

AB - An innovative approach combining chemical etching and a "lift-off" process, which allows back contact processing after CIGSe deposition, permitted to use Au as a highly reflective back contact in ultrathin CIGSe solar cells. The Au back contact does not degrade the other parameters of the cell, as good ohmicity on CIGSe is achieved. An important photocurrent increase compared with regular Mo back contact solar cells is achieved by the enhanced light trapping effect due to the back reflector, leading to an absolute efficiency increase of +2.5% for a CIGSe thickness of 0.4 μm. This approach could be used for further investigations in improving the back side of ultrathin CIGSe solar cells.

KW - CIGSe

KW - back contact

KW - lift-off

KW - light trapping

KW - reflectivity

KW - ultrathin solar cells

U2 - 10.1002/pip.2162

DO - 10.1002/pip.2162

M3 - Article

AN - SCOPUS:84864485990

SN - 1062-7995

VL - 20

SP - 582

EP - 587

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

IS - 5

ER -

Towards ultrathin copper indium gallium diselenide solar cells: Proof of concept study by chemical etching and gold back contact engineering

Abstract

Keywords

UN SDGs

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