Abstract
The transient electroluminescence of monolayer and bilayer sexithiophene-based diodes has been measured. The delay time of the luminescence onset of the monolayer diode corresponds to a hole mobility of 5 × 10-6 cm2 V-1 s-1 which is considerably lower than that obtained by field-effect measurements. This is interpreted in terms of strong transient trapping. The bilayer diode presents a twofold time-resolved response which is attributed to the different mobility of its constituent layers.
| Original language | English |
|---|---|
| Pages (from-to) | 197-200 |
| Number of pages | 4 |
| Journal | Synthetic Metals |
| Volume | 67 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 1 Jan 1994 |
Keywords
- Diodes
- Electroluminescence
- Sexithiophene
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