Transient electroluminescence of monolayer and bilayer sexithiophene diodes

  • Philippe Delannoy
  • , Gilles Horowitz
  • , Habib Bouchriha
  • , Françoise Deloffre
  • , Jean Louis Fave
  • , Francis Garnier
  • , Riadh Hajlaoui
  • , Michel Heyman
  • , Fayçal Kouki
  • , Jean Louis Monge
  • , Pierre Valat
  • , Véronique Wintgens
  • , Abderrahim Yassar

Research output: Contribution to journalArticlepeer-review

Abstract

The transient electroluminescence of monolayer and bilayer sexithiophene-based diodes has been measured. The delay time of the luminescence onset of the monolayer diode corresponds to a hole mobility of 5 × 10-6 cm2 V-1 s-1 which is considerably lower than that obtained by field-effect measurements. This is interpreted in terms of strong transient trapping. The bilayer diode presents a twofold time-resolved response which is attributed to the different mobility of its constituent layers.

Original languageEnglish
Pages (from-to)197-200
Number of pages4
JournalSynthetic Metals
Volume67
Issue number1-3
DOIs
Publication statusPublished - 1 Jan 1994

Keywords

  • Diodes
  • Electroluminescence
  • Sexithiophene

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